Datasheet > DMN2065UW

DMN2065UW

更新时间： 2024-09-24 01:22:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	204K
描述
Low On-Resistance

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中文翻译

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DMN2065UW 数据手册

DMN2065UW

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= 25°C

56mΩ @ V_GS= 4.5V

65mΩ @ V_GS= 2.5V

93mΩ @ V_GS= 1.8V

140mΩ @ V_GS= 1.5V

2.8A

2.6A

20V

Qualified to AEC-Q101 standards for High Reliability

2.2A

1.8A

Mechanical Data

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

Case: SOT323

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.

Solderable per MIL-STD-202, Method 208

•

General Purpose Interfacing Switch

Power Management Functions

DC-DC Converters

•

Weight: 0.027 grams (approximate)

Analog Switch

Drain

SOT323

Gate

Source

Equivalent Circuit

Top View

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN2065UW-7

SOT323

3000/Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMH = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

DMH

M = Month (ex: 9 = September)

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

October 2011

DMN2065UW

Document number: DS35554 Rev. 1 – 2

12 3 4 5 6

中文翻译

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