Datasheet > DMN2050LQ

DMN2050LQ

更新时间： 2023-12-06 20:11:13

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	397K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMN2050LQ 数据手册

DMN2050LQ

= 10V

= 5V

= 4.5V

= 3.0V

= 2.5V

)

(

= 2.0V

I ^D

T = 150°C

T = 125°C

= 85°C

= 25°C

= 1.5V

= -55°C

0.5

1.5

2.5

0.5

1.5

2.5

3.5

4.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristic

Fig. 1 Typical Output Characteristic

0.08

0.07

0.06

0.04

)



(

= 4.5V

= 150°C

0.06

0.05

0.04

0.03

0.02

= 125°C

= 85°C

= 2.5V

= 25°C

= 4.5V

= 10V

= -55°C

0.02

)

0.01

(

I_D, DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

1.4

1.2

1.0

= 10V

= 10A

= 1mA

= 4.5V

1.2

1.0

= 5A

= 225500礎A

0.8

0.6

0.4

0.2

0.8

0.6

-50 -25

T_A, AMBIENT TEMPERATURE (

Fig. 5 On-Resistance Variation with Temperature

75 100 125 150

-50 -25

75 100 125 150

(°C )

癈

)

T_A, AMBIENT TEMPERATURE (

癈 )

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

3 of 6

www.diodes.com

May 2019

DMN2050LQ

Document number: DS41550 Rev. 2 - 2

1 234 5 6

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