Datasheet > DMN10H220LFVW

DMN10H220LFVW

更新时间： 2023-12-06 20:11:23

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描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMN10H220LFVW 数据手册

DMN10H220LFVW

0.45

0.4

2.5

I_D= 1mA

0.35

0.3

V_GS= 4.5V, I_D= 1A

0.25

0.2

I_D= 250μA

1.5

0.15

0.1

V_GS= 10V, I_D= 2A

0.5

0.05

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

f = 1MHz

V_GS= 0V

1000

100

C_iss

C_oss

T_J= 150℃

T_J= 85℃

T_J= 25℃

C_rss

T_J= 125℃

T_J= -55℃

100

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

1000

100

R_DS(ON)

Limited

P_W= 10µs

P_W= 100µs

P_W= 1µs

P_W= 1ms

P_W= 10ms

T_J(Max)= 150℃

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

P_W= 100ms

P_W= 1s

V_DS= 50V, I_D= 1.6A

0.1

0.01

V_GS= 10V

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Q_g(nC)

Figure 11. Gate Charge

4 of 7

www.diodes.com

June 2020

DMN10H220LFVW

Document number: DS42452 Rev. 2 - 2

1 2 345 6 7

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