Datasheet > DMN10H6D2LFDB

DMN10H6D2LFDB

更新时间： 2024-09-24 14:55:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	454K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN10H6D2LFDB 数据手册

DMN10H6D2LFDB

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Gate Threshold Voltage

Low Input Capacitance

I_DMax

T_A= +25°C

BV_DSS

R_DS(ON)Max

Fast Switching Speed

0.27A

0.21A

6Ω @ V_GS= 10V

Low Input/Output Leakage

High Drain-Source Voltage Rating

100V

10Ω @ V_GS= 4.5V

ESD Protected Up to 1kV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. "Green" Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Mechanical Data

Description and Applications



Case: U-DFN2020-6

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish NiPdAu Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Weight: 0.0065 grams (Approximate)

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high-efficiency power management applications.



Small Servo Motor Control

Power MOSFET Gate Drivers

Switching Applications



U-DFN2020-6 (Type B)

ESD Protected

Pin1

Internal Schematic

Bottom View

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN10H6D2LFDB-7

DMN10H6D2LFDB-13

U-DFN2020-6 (Type B)

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

1 of 8

www.diodes.com

June 2021

DMN10H6D2LFDB

Document number: DS43009 Rev. 2 - 2

12 3 4 5 6 7 8

中文翻译

下载PDF

与DMN10H6D2LFDB相关器件

型号	品牌	获取价格	描述	数据表
DMN10H700S	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H700S_17	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H700S-13	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H700S-7	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN113.3	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| CHIP
DMN1150UFB	DIODES	获取价格	Low On-Resistance
DMN1150UFB_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1150UFB-7B	DIODES	获取价格	Low On-Resistance
DMN1150UFL3	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1250UFEL	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN10H6D2LFDB相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

6
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

78
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

68

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN10H6D2LFDB

DMN10H6D2LFDB 数据手册

与DMN10H6D2LFDB相关器件

与DMN10H6D2LFDB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN10H6D2LFDB

DMN10H6D2LFDB 数据手册

与DMN10H6D2LFDB相关器件

与DMN10H6D2LFDB相关文章

您还可以找

您在本页遇到什么问题？