Datasheet > DMN10H220LFVW

DMN10H220LFVW

更新时间： 2023-12-06 20:11:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	629K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN10H220LFVW 数据手册

DMN10H220LFVW

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

V_GS= 6.0V

V_DS= 5V

V_GS= 10V

V_GS= 4.5V

V_GS= 4.0V

V_GS= 3.8V

T_J= 85℃

T_J= 25℃

T_J= 150℃

T_J= 125℃

V_GS= 3.5V

V_GS= 3.3V

T_J= -55℃

0.5

1.5

2.5

3.5

4.5

V_GS, GATE-SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

Figure 2. Typical Transfer Characteristic

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.5

0.45

0.4

I_D= 2A

I_D= 1A

0.35

0.3

V_GS= 4.5V

0.25

0.2

0.15

0.1

V_GS= 10V

0.05

10 12 14 16 18 20

I_D, DRAIN-SOURCE CURRENT (A)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 3. Typical On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. Typical Transfer Characteristic

2.4

2.2

1.2

V_GS= 10V

V_GS= 10V, I_D= 2A

T_J= 150℃

T_J= 125℃

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

T_J= 85℃

0.8

0.6

0.4

V_GS= 4.5V, I_D= 1A

T_J= 25℃

T_J= -55℃

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

I_D, DRAIN CURRENT (A)

Figure 6. On-Resistance Variation with Junction

Temperature

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

3 of 7

www.diodes.com

June 2020

DMN10H220LFVW

Document number: DS42452 Rev. 2 - 2

1 234 5 6 7

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