5秒后页面跳转
DMN1008UFDFQ PDF预览

DMN1008UFDFQ

更新时间: 2023-12-06 20:08:15
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 543K
描述
12V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN1008UFDFQ 数据手册

 浏览型号DMN1008UFDFQ的Datasheet PDF文件第2页浏览型号DMN1008UFDFQ的Datasheet PDF文件第3页浏览型号DMN1008UFDFQ的Datasheet PDF文件第4页浏览型号DMN1008UFDFQ的Datasheet PDF文件第5页浏览型号DMN1008UFDFQ的Datasheet PDF文件第6页浏览型号DMN1008UFDFQ的Datasheet PDF文件第7页 
DMN1008UFDFQ  
12V N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
0.6mm Profile Ideal for Low Profile Applications  
PCB Footprint of 4mm2  
Low Gate Threshold Voltage  
ID Max  
BVDSS  
RDS(ON) Max  
TA = +25°C  
8mΩ @ VGS = 4.5V  
12.2A  
10.4A  
Fast Switching Speed  
12V  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
The DMN1008UFDFQ is suitable for automotive applications  
requiring specific change control; this part is AEC-Q101  
qualified, PPAP capable, and manufactured in IATF 16949  
certified facilities.  
12.5mΩ @ VGS = 2.5V  
Description and Applications  
https://www.diodes.com/quality/product-definitions/  
This MOSFET is designed to meet the stringent requirements of  
automotive applications. It is qualified to AEC-Q101, supported by a  
PPAP and is ideal for use in:  
Mechanical Data  
Battery Management Application  
Power Management Functions  
DC-DC Converters  
Case: U-DFN2020-6  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish NiPdAu over Copper Leadframe. Solderable  
e4  
per MIL-STD-202, Method 208  
Weight: 0.0065 grams (Approximate)  
D
U-DFN2020-6 (Type F)  
G
S
Pin Out  
Bottom View  
Top View  
Bottom View  
Internal Schematic  
Ordering Information (Note 4)  
Part Number  
DMN1008UFDFQ-7  
DMN1008UFDFQ-13  
Reel Size (inches)  
Case  
Quantity per Reel  
3,000  
7
13  
U-DFN2020-6 (Type F)  
U-DFN2020-6 (Type F)  
10,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and  
Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
8N = Product Type Marking Code  
YWX = Date Code Marking  
Y = Year (ex: 0 = 2020)  
8N
W = Week (ex: a = Week 27; z Represents Week 52 and 53)  
X = Internal Code (ex: U = Monday)  
Date Code Key  
Year  
2019  
2020  
2021  
2022  
2023  
2024  
2025  
2026  
2027  
2028  
2029  
2030  
Code  
9
0
1
2
3
4
5
6
7
8
9
0
Week  
Code  
1-26  
27-52  
53  
A-Z  
a-z  
z
Internal Code  
Code  
Sun  
Mon  
Tue  
Wed  
Thu  
Fri  
Sat  
T
U
V
W
X
Y
Z
1 of 7  
www.diodes.com  
July 2020  
© Diodes Incorporated  
DMN1008UFDFQ  
Datasheet number: DS42430 Rev. 2 - 2  

与DMN1008UFDFQ相关器件

型号 品牌 获取价格 描述 数据表
DMN1014UFDF DIODES

获取价格

12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1016UCB6 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1016UCB6_16 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1016UCB6-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1017UCP3 DIODES

获取价格

12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1019UFDE DIODES

获取价格

12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1019UFDE-7 DIODES

获取价格

12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1019USN DIODES

获取价格

12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1019USN_15 DIODES

获取价格

12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1019USN-13 DIODES

获取价格

Small Signal Field-Effect Transistor,