Datasheet > DMN1025UFDB_15

DMN1025UFDB_15

更新时间： 2024-11-19 01:08:47

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	272K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN1025UFDB_15 数据手册

DMN1025UFDB

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

Low Input Capacitance

Low Profile, 0.6mm Max Height

ESD protected gate.

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I_{D MAX}

T_A= +25°C

Device

V_(BR)DSS

R_{DS(ON) max}

6.9A

6.3A

5.5A

25mΩ @ V_GS= 4.5V

30mΩ @ V_GS= 2.5V

38mΩ @ V_GS= 1.8V

N-Channel

12V

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.



Case: U-DFN2020-6 Type B

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Applications

Terminals: Finish NiPdAu over Copper leadframe. Solderable per



Load Switch

Power Management Functions

Portable Power Adaptors

MIL-STD-202, Method 208



Terminals Connections: See Diagram Below

Weight: 0.0065 grams (approximate)

U-DFN2020-6

Type B

ESD PROTECTED

Gate Protection

Diode

Gate Protection

Diode

Pin1

N-CHANNEL MOSFET

Bottom View

Internal Schematic

Ordering Information (Note 4)

Part Number

DMN1025UFDB-7

DMN1025UFDB-13

Case

Packaging

3000/Tape & Reel

10000/Tape & Reel

U-DFN2020-6 Type B

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/quality/product_compliance_definitions/.

Marking Information

NB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Date Code Key

Year

2012

2013

2014

2015

2016

2017

2018

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

April 2014

DMN1025UFDB

Document number: DS36668 Rev. 2 - 2

12 3 4 5 6

中文翻译

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与DMN1025UFDB_15相关器件

型号	品牌	获取价格	描述	数据表
DMN1025UFDB-13	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1025UFDB-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1029UFDB	DIODES	获取价格	N-CHANNEAL ENHANCEMENT MODE MOSFET
DMN1029UFDB-13	DIODES	获取价格	N-CHANNEAL ENHANCEMENT MODE MOSFET
DMN1029UFDB-7	DIODES	获取价格	N-CHANNEAL ENHANCEMENT MODE MOSFET
DMN1032UCP4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1045UFR4	DIODES	获取价格	N-Channel Mosfet
DMN1053UCP4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1054UCB4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H099	HOTTECH	获取价格	TO-252

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