是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 16 weeks |
风险等级: | 1.65 | 其他特性: | HIGH RELIABILITY |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.41 A | 最大漏极电流 (ID): | 0.38 A |
最大漏源导通电阻: | 1.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.65 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
DMG1029SV-7 | DIODES | Small Signal Field-Effect Transistor, 0.37A I(D), 60V, 2-Element, N-Channel and P-Channel, |
获取价格 |
|
DMG-10B-300 | MERRIMAC | DOUBLE BALANCED MIXER |
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|
DMG10N60-TR | DYELEC | 600V N-Channel Power MOSFET |
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|
DMG10N60-TU | DYELEC | 600V N-Channel Power MOSFET |
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DMG20102 | PANASONIC | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, |
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DMG20401 | PANASONIC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, |
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