是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 16 weeks |
风险等级: | 0.87 | 其他特性: | HIGH RELIABILITY, LOW THRESHOLD |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.5 A | 最大漏极电流 (ID): | 0.37 A |
最大漏源导通电阻: | 1.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
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DOUBLE BALANCED MIXER | |
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600V N-Channel Power MOSFET | |
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600V N-Channel Power MOSFET | |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
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Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) | |
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Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG204B0 | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG204B00R | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, |