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DMC904E2

更新时间： 2024-11-27 19:54:31
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 472K
描述
RF Small Signal Bipolar Transistor, 0.015A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

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DMC904E2 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.69最大集电极电流 (IC)：0.015 A
集电极-发射极最大电压：20 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：65最高频带：VERY HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.125 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：650 MHzBase Number Matches：1

DMC904E2 数据手册

 浏览型号DMC904E2的Datasheet PDF文件第2页浏览型号DMC904E2的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC904E2  
Silicon NPN epitaxial planar type  
For high frequency amplification  
Features  
High transition frequency fT  
ꢀPackage  
ꢀCode  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini6-F3-B  
Package dimension clicks here.→  
Click!  
ꢀBasic Part Number  
ꢀPin Name  
Dual DSC2G02 (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Packaging  
3: Collector (Tr2)  
DMC904E20R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
ꢀMarking Symbol: D0  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
(C1) (B2) (E2)  
30  
6
5
4
20  
V
3
15  
V
Tr1  
Tr2  
mA  
mW  
°C  
°C  
Total power dissipation  
PT  
125  
1
2
3
(E1) (B1) (C2)  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Emitter-base voltage (Collector open)  
Base-emitter voltage  
Symbol  
Conditions  
Min  
30  
3
Typ  
Max  
Unit  
V
VCBO IC = 10 µA, IE = 0  
VEBO IE = 10 µA, IC = 0  
V
VBE  
hFE  
fT  
VCE = 6 V, IC = 1 mA  
VCE = 6 V, IC = 1 mA  
VCE = 6 V, IC = 1 mA  
0.72  
V
Forward current transfer ratio  
Transition frequency  
65  
260  
450  
650  
0.6  
MHz  
Reverse transfer capacitance  
(Common emitter)  
Cre  
VCE = 6 V, IC = 1 mA, f = 10.7 MHz  
pF  
Power gain  
PG  
NF  
VCE = 6 V, IC = 1 mA, f = 100 MHz  
VCE = 6 V, IC = 1 mA, f = 100 MHz  
24  
dB  
dB  
Noise figure  
3.3  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: June 2012  
Ver. CED  
1
123

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