Datasheet > DHG10I1200PM

DHG10I1200PM

更新时间： 2024-09-21 12:56:11

品牌	Logo	应用领域
IXYS		二极管快恢复二极管软恢复二极管
页数	文件大小	规格书
2页	113K
描述
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

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中文翻译

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DHG10I1200PM 数据手册

DHG 10 I 1200PM

advanced

V_RRM= 1200 V

Sonic-FRD

10 A

I_FAV

t_rr

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Single Diode

75 ns

Part number

DHG 10 I 1200PM

Backside: isolated

Features / Advantages:

Applications:

Package:

TO-220FPAC

● Planar passivated chips

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable

operation

● Industry standard outline

● Plastic overmolded tab for

electrical isolation

● Epoxy meets UL 94V-0

● RoHS compliant

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

R a t i n g s

Symbol

V_RRM

I_R

Definition

Conditions

min.

typ.

max.

Unit

max. repetitive reverse voltage

25 °C

1200

T_VJ

reverse current

V = 1200

T_VJ

µA

V = 1200

= 125 °C

25 °C

1.5

forward voltage

I_F

10 A

2.69

3.56

V_F

20 A

I_F

10 A

20 A

T_VJ= 125 °C

2.38

3.33

average forward current

threshold voltage

I_FAV

rectangular, d = 0.5

T_C

30 °C

V_F0

r_F

T_VJ= 150 °C

1.60

73.6

for power loss calculation only

slope resistance

thermal resistance junction to case

virtual junction temperature

total power dissipation

R_thJC

T_VJ

4.00

150

K/W

°C

-55

P_tot

25 °C

45 °C

25 °C

T_C

max. forward surge current

max. reverse recovery current

I_FSM

I_RM

t_p= 10 ms (50 Hz), sine

T_VJ

8.5

T_VJ

I_F= 10 A;

= 125 °C

25 °C

= 125 °C

-di_F/dt = 350 A/µs

V_R= 800 V

t _rr

reverse recovery time

T_VJ

junction capacitance

C_J

V_R= 600 V;

°C

tbd

f = 1 MHz

_AS= tbd A; L = 100 µH

V = 1.5·V typ.;

non-repetitive avalanche energy

repetitive avalanche current

E_AS

I_AR

T_VJ

25 °C

tbd

f = 10 kHz

IXYS reserves the right to change limits, conditions and dimensions.

* Data according to IEC 60747and per diode unless otherwise specified

中文翻译

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DHG10I1200PM 替代型号

型号	品牌	替代类型	描述	数据表
MBR1060G	ONSEMI	功能相似	SWITCHMODE Power Rectifiers
MBR10100G	ONSEMI	功能相似	SWITCHMODE Power Rectifiers

与DHG10I1200PM相关器件

型号	品牌	获取价格	描述	数据表
DHG10I1800PA	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1800V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I1800PA	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1800V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I600PA	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I600PM	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, TO-220FPAB, 2 PI
DHG10I600PM	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, TO-220FPAB, 2 PI
DHG10IM1800UZ	LITTELFUSE	获取价格	SONIC系列提供改进的反向恢复特性，具有硬关断能力，击穿电压高达1800V。
DHG10IM1800UZ-TRL	LITTELFUSE	获取价格	Rectifier Diode,
DHG10IM1800UZ-TUB	LITTELFUSE	获取价格	Rectifier Diode,
DHG20C1200PB	IXYS	获取价格	Sonic Fast Recovery Diode
DHG20C1200PB	LITTELFUSE	获取价格	SONIC系列提供改进的反向恢复特性，具有硬关断能力，击穿电压高达1800V。

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