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DHF30IM600QB PDF预览

DHF30IM600QB

更新时间: 2024-11-05 20:44:15
品牌 Logo 应用领域
IXYS 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
2页 161K
描述
Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN

DHF30IM600QB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3P
包装说明:ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DHF30IM600QB 数据手册

 浏览型号DHF30IM600QB的Datasheet PDF文件第2页 
DHF 30 IM 600QB  
advanced  
VRRM = 600 V  
Sonic-FRD  
30 A  
IFAV  
trr  
=
=
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
35 ns  
1
Part number  
2
DHF 30 IM 600QB  
3
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
TO-3P  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
Industry standard outline  
- compatible with TO-247  
Epoxy meets UL 94V-0  
RoHS compliant  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Symbol  
VRRM  
IR  
Definition  
Conditions  
min.  
typ.  
max.  
Unit  
max. repetitive reverse voltage  
=
=
25 °C  
25 °C  
600  
V
TVJ  
reverse current  
V = 600  
50  
5
V
V
TVJ  
TVJ  
TVJ  
µA  
R
V = 600  
= 125 °C  
25 °C  
mA  
R
forward voltage  
IF  
IF  
=
=
30 A  
=
2.36  
3.15  
V
V
VF  
60 A  
0.00  
0.00  
IF  
IF  
=
=
30 A  
60 A  
TVJ = 125 °C  
2.20  
3.08  
V
V
average forward current  
threshold voltage  
IFAV  
rectangular, d = 0.5  
TC  
=
35 °C  
30  
A
V
VF0  
rF  
TVJ = 150 °C  
1.31  
28.6  
for power loss calculation only  
slope resistance  
m
Ω
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
RthJC  
TVJ  
3.50  
150  
180  
200  
K/W  
°C  
W
-55  
Ptot  
=
=
=
25 °C  
45 °C  
25 °C  
TC  
max. forward surge current  
max. reverse recovery current  
IFSM  
IRM  
tp = 10 ms (50 Hz), sine  
TVJ  
A
12  
A
A
TVJ  
TVJ  
IF = 30 A;  
= 125 °C  
25 °C  
= 125 °C  
-diF /dt = 600 A/µs  
VR = 400 V  
t rr  
reverse recovery time  
=
35  
40  
ns  
ns  
TVJ  
TVJ  
TVJ  
junction capacitance  
CJ  
VR = 300 V;  
=
=
°C  
pF  
mJ  
A
f = 1 MHz  
AS = tbd A; L = 100 µH  
V = 1.5·V typ.;  
25  
non-repetitive avalanche energy  
repetitive avalanche current  
EAS  
IAR  
I
TVJ  
25 °C  
tbd  
tbd  
f = 10 kHz  
A
R
Recommended replacement:  
DHG30I600HA, DHG30I600PA  
IXYS reserves the right to change limits, conditions and dimensions.  
* Data according to IEC 60747and per diode unless otherwise specified  
© 2006 IXYS all rights reserved  
20080317a  

DHF30IM600QB 替代型号

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