DF2B6.8E

更新时间： 2024-02-02 10:19:37

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	142K
描述
DIODE BIDIRECTIONAL, SILICON, TVS DIODE, ESC, 1-1G1A, 2 PIN, Transient Suppressor

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技术参数
数据手册

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DF2B6.8E 技术参数

生命周期：	Active	包装说明：	R-XBCC-N2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.74
最大击穿电压：	7.8 V	最小击穿电压：	5.8 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	R-XBCC-N2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性：	BIDIRECTIONAL	参考标准：	IEC-61000-4-5
最大重复峰值反向电压：	5 V	表面贴装：	YES
技术：	AVALANCHE	端子形式：	NO LEAD
端子位置：	BOTTOM	Base Number Matches：	1

DF2B6.8E 数据手册

DF2B6.8CT

TOSHIBA Diodes for Protecting against ESD

DF2B6.8CT

Product for Use Only as Protection against Electrostatic Discharge (ESD)

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

Unit in mm

the constant voltage diode application.

0.6±0.05

Abusolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

0.5±0.03

+0.02

0.38

-0.03

0.05±0.03

150*

150

°C

Junction temperature

Storage temperature range

stg

−55 to 150

°C

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

CST2

―

JEDEC

JEITA

1-1P1A

TOSHIBA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/

“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Weight: 0.7 mg (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse stand-off voltage

Reverse breakdown voltage

Reverse current

―

5.8

―

6.8

―

5.0

7.8

0.5

RWM

I = 1 mA

= 5 V

μA

RWM

= 0 V, f = 1 MHz

Total capacitance

―

Marking

Equivalent Circuit (top view)

2009-06-22

12 3 4

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