Datasheet > DF2B6.8M1ACT

DF2B6.8M1ACT

更新时间： 2024-02-02 08:42:55

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
8页	268K
描述
ESD Protection Diodes Silicon Epitaxial Planar

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技术参数
数据手册

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DF2B6.8M1ACT 技术参数

生命周期：	Active	包装说明：	ULTRA COMPACT, CST2, 2 PIN
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.74	其他特性：	LOW CAPACITANCE
最小击穿电压：	6 V	击穿电压标称值：	6 V
最大钳位电压：	17 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-XBCC-N2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子形式：	NO LEAD	端子位置：	BOTTOM
Base Number Matches：	1

DF2B6.8M1ACT 数据手册

DF2B6.8M1ACT

ESD Protection Diodes Silicon Epitaxial Planar

DF2B6.8M1ACT

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Packaging and Internal Circuit

1: Pin 1

2: Pin 2

CST2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Electrostatic discharge voltage(IEC61000-4-2)(Contact)

Junction temperature

VESD

±8

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-07-03

Rev.2.0

12 3 4 5 6 7 8

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