Datasheet > DF2B6.8E(TPH3)

DF2B6.8E(TPH3)

更新时间： 2024-01-31 01:07:17

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	149K
描述
TRANSIENT SUPPRESSOR DIODE,SINGLE,BIDIRECTIONAL,5V V(RWM),EMD2VAR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DF2B6.8E(TPH3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.88
Is Samacsys：	N	击穿电压标称值：	6.8 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

DF2B6.8E(TPH3) 数据手册

DF2B6.8E

TOSHIBA Diodes for Protecting against ESD

DF2B6.8E

Product for Use Only as Protection against Electrostatic Discharge (ESD)

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

Unit : mm

Abusolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

150*

150

°C

Junction temperature

Storage temperature range

stg

−55 to 150

°C

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

―

JEDEC

JEITA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/

“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

1-1G1A

TOSHIBA

Weight: 1.4 mg (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse stand-off voltage

Reverse breakdown voltage

Reverse current

―

5.8

―

6.8

―

5.0

7.8

0.5

RWM

I = 1 mA

= 5 V

μA

RWM

= 0 V, f = 1 MHz

Total capacitance

―

Marking

Equivalent Circuit (Top View)

2010-08-23

12 3 4

下载PDF

与DF2B6.8E(TPH3)相关器件

型号	品牌	描述	获取价格	数据表
DF2B6.8E(TPH3,F)	TOSHIBA	TRANSIENT SUPPRESSOR DIODE,SINGLE,BIDIRECTIONAL,5V V(RWM),EMD2VAR	获取价格
DF2B6.8E(TPL3,F)	TOSHIBA	TRANSIENT SUPPRESSOR DIODE,SINGLE,BIDIRECTIONAL,5V V(RWM),EMD2VAR	获取价格
DF2B6.8FS	TOSHIBA	Diodes for Protecting against ESD	获取价格
DF2B6.8M1ACT	TOSHIBA	ESD Protection Diodes Silicon Epitaxial Planar	获取价格
DF2B6.8M1ACT(TPL3)	TOSHIBA	ESD DIODE	获取价格
DF2B6.8M1CT	TOSHIBA	DIODE BIDIRECTIONAL, SILICON, TVS DIODE, ULTRA COMPACT, CST2, 2 PIN, Transient Suppressor	获取价格