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DF206S-G PDF预览

DF206S-G

更新时间: 2024-11-11 19:47:47
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 103K
描述
Bridge Rectifier Diode, 2A, 600V V(RRM),

DF206S-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.65
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 V湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:4
最高工作温度:150 °C最大输出电流:2 A
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:YESBase Number Matches:1

DF206S-G 数据手册

 浏览型号DF206S-G的Datasheet PDF文件第2页浏览型号DF206S-G的Datasheet PDF文件第3页浏览型号DF206S-G的Datasheet PDF文件第4页 
SMD Glass Passivated Bridge Rectifiers  
DF2005S-G Thru. DF210S-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 2.0A  
RoHS Device  
Features  
DFS  
-Rating to 1000V PRV  
0.205(5.20)  
0.197(5.00)  
-Ideal for printed circuit board.  
0.335(8.50)  
0.307(7.80)  
-Low forward voltage drop.  
-
+
0.031(0.80)  
0.023(0.60)  
0.256(6.50)  
0.244(6.20)  
-High current capability.  
~
~
-The plastic material has UL flammability  
classification 94V-0  
0.406(10.30)  
0.394(10.00)  
0.047(1.20)  
0.037(0.95)  
0.014(0.35)  
0.008(0.20)  
-UL recognized file # E217139  
R
0.323(8.2)  
0.315(8.0)  
0.102(2.6)  
Max.  
Mechanical Data  
0.102(2.6)  
0.087(2.2)  
0.063(1.6)  
0.055(1.4)  
-Polarit: As marked on Body  
-Weight: 0.02 ounces, 0.38 grams  
-Mounting position: Any  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
DF  
DF  
DF  
DF  
DF  
DF  
DF  
Symbol  
Parameter  
Unit  
2005S-G 201S-G 202S-G 204S-G 206S-G 208S-G 210S-G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward  
I
(AV)  
2.0  
A
A
Rectified Current @TA=40°C  
Peak Forward Surage Current, 8.3ms Single  
Half Sine-Wave Super Imposed On Rated  
Load (JEDEC Method)  
IFSM  
60  
Maximum Forward Voltage at 2.0A DC  
VF  
1.1  
V
@TJ=25°C  
@TJ=125°C  
10  
500  
Maximum DC Reverse Current  
At Rate DC Blocking Voltage  
μA  
IR  
I2T Rating for Fusing (t<8.3ms)  
A s  
2
I2t  
10.4  
25  
Typical Junction Capacitandce Per Element  
(Note 1)  
pF  
C
J
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
R
θJA  
40  
°C/W  
°C  
T
J
-55 to +150  
-55 to +150  
Storage Temperature Range  
Notes:  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to ambient mounted on P.C.B with 0.5*0.5"(13*13mm) copper pads.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: F  
Page 1  
QW-BBR47  
Comchip Technology CO., LTD.  

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