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DF15005S-T-F PDF预览

DF15005S-T-F

更新时间: 2024-11-10 20:02:23
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 82K
描述
Rectifier Diode,

DF15005S-T-F 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76Base Number Matches:1

DF15005S-T-F 数据手册

 浏览型号DF15005S-T-F的Datasheet PDF文件第2页浏览型号DF15005S-T-F的Datasheet PDF文件第3页 
SPICE MODELS: DF15005S DF1501S DF1502S DF1504S DF1506S DF1508S DF1510S  
DF15005S - DF1510S  
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE  
RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
Low Forward Voltage Drop, High Current Capability  
Surge Overload Rating to 50A Peak  
DF-S  
Min  
Designed for Surface Mount Application  
Dim  
A
Max  
7.90  
6.50  
0.30  
0.33  
10.40  
1.53  
8.51  
3.40  
5.20  
1.20  
L
G
UL Listed Under Recognized Component Index, File  
Number E94661  
7.40  
6.20  
0.22  
0.076  
¾
B
·
Lead Free Finish, RoHS Compliant (Note 3)  
C
A B  
D E  
D
Mechanical Data  
E
·
·
Case: DF-S  
G
H
1.02  
8.13  
2.40  
5.00  
1.00  
H
C
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
J
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin. Solder Plated Leads,  
Solderable per MIL-STD-202, Method 208  
K
K
L
·
·
·
Polarity: As Marked on Case  
All Dimensions in mm  
Marking: Type Number, See Page 3  
Weight: 0.38 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DF  
DF  
DF  
DF  
DF  
DF  
DF  
Characteristic  
Symbol  
Unit  
15005S 1501S 1502S 1504S 1506S 1508S 1510S  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
580  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
1.5  
V
A
Average Forward Rectified Current  
@ TA = 40°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms  
single half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
50  
A
Forward Voltage (per element)  
@ IF = 1.5A  
VFM  
IRM  
1.1  
V
Peak Reverse Current at rated  
DC blocking voltage (per element)  
@ TA 25°C  
=
10  
500  
µA  
@ TA = 125°C  
I2t Rating for Fusing (t<8.3ms)  
I2t  
10.4  
25  
A2s  
pF  
CT  
Typical Total Capacitance per element (Note 1)  
Typical Thermal Resistance, Junction to Ambient  
(Note 2)  
RqJA  
40  
°C/W  
°C  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.  
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
2
DS17002 Rev. 6 - 2  
1 of 3  
DF15005S-DF1510S  
www.diodes.com  
ã Diodes Incorporated  

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