Datasheet > DF1501S

DF1501S

更新时间： 2024-11-27 12:53:51

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
2页	171K
描述
Glass passivated chip junctions, Low Forward Voltage Drop, High Current Capability

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DF1501S 数据手册

Product specification

DF15005S - DF1510S

DF-S

0.205 (5.2)

0.195 (5.0)

■ Features

0.047 (1.20)

0.040 (1.02)

● Glass passivated chip junctions

● Low Forward Voltage Drop, High Current Capability

● Surge Overload Rating to 50A Peak

0.404 (10.3)

0.386 (9.80)

0.335 (8.51)

45^o

0.320 (8.13)

0.255 (6.5)

0.245 (6.2)

0.013 (0.330)

0.130 (3.3)

0.009 (0.241)

0.120 (3.05)

0.060 (1.524)

0.040 (1.016)

0.013 (0.330)

0.003 (0.076)

Dimensions in inches and (millimeters)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol DF15005S DF1501S DF1502S DF1504S DF1506S DF1508S DF1510S Unit

VRMM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRWM

VDC

100

200

400

600

800

1000

RMS Reverse Voltage

VRMS

140

280

1.5

420

560

700

Average Forward Rectified Current TA=@ 40℃

Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single half-sine-wave Superimposed on Rated Load

(JEDECmethod)

IFSM

1.1

Forward Voltage (per element) @ IF = 1.5A

500

Reverse Current(per element) @ Rated VR ,

TA = 25℃

TA = 125℃

μA

I²t

A²s

Rating for fusing (t < 8.3ms)

Typical Total Capacitance (per element) (Note 1)

Typical Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

RθJA

Tj, Tstg

℃/W

℃

-55 to +150

Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.

2.Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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