DF005MA, DF01MA, DF02MA, DF04MA, DF06MA, DF08MA, DF10MA
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
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• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
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for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
1 A
MECHANICAL DATA
IF(AV)
Case: DFM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM
IR
30 A
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 1.0 A
TJ max.
1.1 V
150 °C
Quad
Polarity: As marked on body
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Device marking code
DFA005
50
DFA01
100
DFA02
200
DFA04
400
DFA06
600
DFA08
800
DFA10
1000
700
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
35
70
140
280
420
560
Maximum DC blocking voltage
50
100
200
400
600
800
1000
Maximum average forward output
rectified current at TA = 40 °C
IF(AV)
1.0
A
Peak forward surge current single
sine-wave superimposed on rated load
IFSM
I2t
30
4.5
A
Rating for fusing (t < 8.3 ms)
A2s
°C
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Maximum
instantaneous
forward voltage
drop per diode
1.0 A
VF
1.1
V
Maximum reverse
current at rated DC
blocking voltage
per diode
TA = 25 °C
5.0
IR
μA
TA = 125 °C
500
Typical junction
capacitance per
diode
4.0 V, 1 MHz
CJ
25
pF
Revision: 16-Aug-13
Document Number: 88572
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000