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DF005S

更新时间: 2024-10-29 22:29:31
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上华 - COMCHIP /
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2页 55K
描述
SMD Genenal Purpose Bridge Rectifier

DF005S 数据手册

 浏览型号DF005S的Datasheet PDF文件第2页 
SMD Genenal Purpose Bridge Rectifier  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
DF005S Thru DF10S  
Glass Passivated Type  
Reverse Voltage: 50 - 1000 Volts  
Forward Current: 1.0 Amp  
Features  
DF-S  
Ideal for surface mount applications  
Easy pick and place  
0.310(7.9)  
0.290(7.4)  
-
+
0.255(6.5)  
0.245(6.2)  
Plastic package has Underwriters Lab.  
flammability classification 94V-0  
~
~
Low forward voltage drop  
Glas passivated junction  
0.013(0.33)  
0.003(0.08)  
0.425(10.8)  
0.400(10.2)  
0.047(1.2)  
0.039(1.0)  
Mechanical data  
0.347(8.8)  
0.322(8.2)  
0.60(1.5)  
0.40(1.0)  
Case: Molded plastic, DF-S  
0.134(3.4)  
0.118(3.0)  
Terminals: solderable per MIL-STD-750,  
method 2026  
Polarity: Marked on body  
Mounting position: Any  
Approx. Weight:1.0 gram  
0.205(5.2)  
0.197(5.0)  
Dimension in inches and (millimeters)  
Maximum Ratings and Electrical Characterics  
Unit  
DF005S DF01S DF02S DF04S DF06S DF08S DF10S  
Symbol  
VRRM  
VDC  
Parameter  
1000  
1000  
700  
50  
50  
35  
400  
400  
280  
600  
600  
420  
800  
800  
560  
Max. Repetitive PeakReverse Voltage  
Max. DC BlockingVoltage  
Max. RMS Voltage  
100  
100  
70  
200  
200  
140  
V
V
V
VRMS  
Peak Surge ForwardCurrent  
8.3ms single halfsine-wave  
superimposed on rateload  
( JEDEC method)  
IFSM  
A
50  
I o  
V F  
I R  
1.0  
Max. Average Forward Current  
A
Max. Instantaneous ForwardCurrent  
at 1.0 A  
1.1  
V
Max. DC ReverseCurrent at RatedDC  
C
Ta=25  
Blocking Voltage  
uA  
10  
C
Ta=125  
500  
R
JA  
Max. Thermal Resistance(Note 1)  
Operating Junction Temperature  
Storage Temperature  
40  
C/W  
T j  
- 5 5 t o + 1 5 0  
C
TSTG  
- 5 5 t o + 1 5 0  
C
Note 1: Thermalresistance from junctionto ambient.  
Page 1  
MDS0301001B  

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