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DDC144NS-7

更新时间： 2024-11-14 21:19:15
品牌 Logo 应用领域
美台 - DIODES 光电二极管晶体管
页数 文件大小 规格书
4页 225K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-6

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DDC144NS-7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：2.26其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：100
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

DDC144NS-7 数据手册

 浏览型号DDC144NS-7的Datasheet PDF文件第2页浏览型号DDC144NS-7的Datasheet PDF文件第3页浏览型号DDC144NS-7的Datasheet PDF文件第4页 
DDC144NS  
DUAL NPN PRE-BIASED TRANSISTOR  
Please click here to visit our online spice models database.  
General Descriptions  
•
DDC144NS features discrete dual NPN transistors that  
can support continuous maximum current up to 100 mA.  
It is suited for applications where the load needs to be  
turned on and off using circuits like micro-controllers,  
comparators, etc., particularly at a point of load. The  
component devices can be used as a part of a circuit or  
as a stand alone discrete device.  
Features  
•
•
•
•
Epitaxial Planar Die Construction  
Fig. 1: SOT-363  
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Mechanical Data  
•
•
Case: SOT-363  
Case Material: Molded Plastic. "Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Figure 2  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.0065 grams (approximate)  
Fig. 2: Schematic and Pin Configuration  
Maximum Ratings, Total Device  
@TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation  
Symbol  
Value  
200  
Unit  
mW  
(Note 3)  
(Note 3)  
Pd  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
Collector Current  
625  
°C/W  
°C  
mA  
Rθ  
JA  
-55 to +150  
100  
Tj, TSTG  
IC(max)  
Maximum Ratings:  
Sub-Component Device - Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Vcc  
Value  
50  
Unit  
V
Supply Voltage  
Input Voltage  
Output Current  
-10 to +40  
100  
V
mA  
Vin  
Io  
Electrical Characteristics:  
Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
Δ R1  
R2/R1  
fT  
Min  
0.5  
⎯
⎯
⎯
Typ  
1.1  
1.5  
0.1  
⎯
⎯
⎯
⎯
⎯
Max  
⎯
3
0.3  
0.18  
0.5  
⎯
+30  
+20  
⎯
Unit  
V
V
Test Condition  
cc = 5V, IO = 100uA  
O = 0.3V, IO = 2mA  
IO/II = 10mA/0.5mA  
VI = 5V  
Vcc = 50V, VI = 0V  
V
V
Input Voltage  
Output Voltage  
Input Current  
Output Current  
V
mA  
uA  
⎯
%
%
⎯
DC Current Gain  
100  
-30  
-20  
⎯
V
O = 5V, IO = 5mA  
Input Resistor (R1) Tolerance  
Resistance Ratio Tolerance  
Gain-Bandwidth Product  
⎯
⎯
250  
MHz  
VCE = 10V, IE = 5mA, f = 100 MHz  
Notes:  
1. No purposefully added lead.  
2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or go to Diodes Inc. suggested pad layout document  
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf  
DS30747 Rev. 6 - 2  
1 of 4  
www.diodes.com  
DDC144NS  
© Diodes Incorporated  
1234

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