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DDC144TU-7 PDF预览

DDC144TU-7

更新时间: 2024-11-14 03:02:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 245K
描述
DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR

DDC144TU-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.7其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DDC144TU-7 数据手册

 浏览型号DDC144TU-7的Datasheet PDF文件第2页浏览型号DDC144TU-7的Datasheet PDF文件第3页浏览型号DDC144TU-7的Datasheet PDF文件第4页浏览型号DDC144TU-7的Datasheet PDF文件第5页浏览型号DDC144TU-7的Datasheet PDF文件第6页 
DDC144TU  
DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR  
General Description  
DDC144TU is best suited for logic switching applications  
using control circuits like micro-controllers, comparators,  
etc. It features two discrete NPN transistors which can  
support maximum continuous current of 100 mA. NPN  
transistors can be used as a control and also these can  
be biased using higher supply voltages due to the built in  
current limiting base resistor of 47 K Ohm. The  
component devices can be used as a part of a circuit or  
as a stand alone discrete device.  
Fig. 1: SOT-363  
Features  
BQ2  
Built in Base Resistors  
CQ1  
EQ2  
Epitaxial Planar Die Construction  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
47k  
DDC144T_DIE  
R2  
Mechanical Data  
Case: SOT-363  
Case Material: Molded Plastic. "Green Molding"  
Compound. UL Flammability Classification Rating 94V-0  
Q2  
DDC144T_DIE  
Q1  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Fig. 2  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
R1 47k  
Marking & Type Code Information: See Page 5  
Ordering Information: See Page 5  
Weight: 0.015 grams (approximate)  
BQ1  
Fig. 2: Schematic and Pin Configuration  
CQ2  
EQ1  
Sub-Component P/N  
DDTC144T_DIE  
DDTC144T_DIE  
Reference  
Device Type  
NPN  
R1 (NOM)  
47KΩ  
R2 (NOM)  
47KΩ  
Figure  
2
2
Q1  
Q2  
NPN  
Maximum Ratings: Total Device @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Value  
Unit  
Power Dissipation  
200  
1.6  
mW  
P
d
Power Deration above 25°C  
Output Current  
mW / °C  
mA  
P
der  
out  
100  
I
Thermal Characteristics  
Characteristic  
Junction Operation and Storage Temperature Range  
Thermal Resistance, junction to ambient (packaged device)  
Symbol  
T , T  
Value  
-55 to +150  
Unit  
°C  
J
STG  
625  
°C/W  
R
θJA  
(Ref: equivalent to only one heated junction) @ T = 25°C  
A
Notes: 1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf.  
DS30767 Rev. 6 - 2  
1 of 6  
DDC144TU  
© Diodes Incorporated  
www.diodes.com  

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