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DD256SR

更新时间: 2024-11-23 18:20:19
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WTE /
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描述
Rectifier Diode,

DD256SR 数据手册

 浏览型号DD256SR的Datasheet PDF文件第2页 
WTE  
POWER SEMICONDUCTORS  
DD250/S – DD256/S  
25A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE  
Features  
Glass Passivated Die Construction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Low Forward  
C-Band Terminal Construction  
C
Anode +  
D
Mechanical Data  
B
Case: 8.4mm or 9.5mm Dish Type Press-Fit  
with Silicon Rubber Sealed on Top  
A
Terminals: Contact Areas Readily Solderable  
Polarity: Cathode to Case (Reverse Units Are  
Available Upon Request and Are Designated  
By A “R” Suffix, i.e. DD250R or DD250SR)  
Polarity: White Color Equals Standard,  
Black Color Equals Reverse Polarity  
8.4mm Dish  
9.5mm Dish  
Dim  
A
Min  
8.25  
2.00  
Max  
Min  
9.30  
2.00  
Max  
9.70  
2.40  
8.45  
2.40  
B
C
1.50 Ø Typical  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
D (+)*  
D (-)*  
17.50  
21.50  
20.50  
24.50  
17.50  
21.50  
20.50  
24.50  
All Dimensions in mm  
“S” Suffix Designates 8.4mm Dish  
No Suffix Designates 9.5mm Dish  
(+)*: Standard Polarity; (-)*: Reverse Polarity  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DD250/ DD251/ DD252/ DD253/ DD254/ DD255/ DD256/  
Characteristic  
Symbol  
Unit  
S
S
S
S
S
S
S
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
200  
300  
400  
500  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
140  
210  
25  
280  
350  
420  
V
A
Average Rectified Output Current @TC = 120°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
300  
1.0  
A
Forward Voltage  
@IF = 25A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
500  
µA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating and Storage Temperature Range  
Cj  
300  
1.0  
pF  
°C/W  
°C  
RθJC  
TJ, TSTG  
-65 to +175  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance: Junction to case, single side cooled.  
DD250/S – DD256/S  
1 of 2  
© 2006 Won-Top Electronics  

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