(F.R.D.)
DIODE MODULE
DD250GB
UL;E76102(M)
Power Diode Module DD250GB series are designed for various rectifier circuits.
DD250GB has two diode chips connected in series in a package and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltage.
92±0.5
26 26
12
4-φ6(M5)�
●
Isolated mounting base
● Two elements in a package for simple(single and three phase)bridge
connections
● Highly reliable glass passivated chips
● High surge current capability
18
2
R8.0
M8×14
(Applications)
Various rectifiers, Bettery chargers, DC motor drives
DD
80±0.3
1�
2�
3�
Unit:㎜
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Symbol
Unit
DD250GB40
DD250GB80
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
400
480
800
960
V
V
Symbol
IF(AV)
Symbol
Conditions
Ratings
250
Unit
A
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180℃conduction, Tc:98℃
IF(RMS)
390
A
Single phase, half wave, 180℃conduction, Tc:98℃
1
IFSM
Z
A
/ cycle, 50/60H , peak value, non-repetitive
5000/5500
125000
2
2
2
2
I
I t
Value for one cycle of surge current
A S
t
Tj
Operating Junction Temperature
Storage Temperature
-40 to +150
-40 to +125
2500
℃
℃
V
Tstg
VISO
A.C. 1 minute
Isolation Breakdown Voltage(R.M.S.)
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Terminal(M8) Recommended Value 8.8-10 (90-105)
Typical Value
2.7(28)
11(115)
510
Mounting
Torque
N・m
(㎏f・B)
Mass
g
■Electrical Characteristics
Ratings
Symbol
Symbol
Conditions
Unit
Min. Typ. Max.
IRRM
VFM
Repetitive Peak Reverse Current
Forward Voltage Drop
Thermal Impedance
j
RRM
50
mA
V
T =150℃ at V
j
FM
1.45
0.14
T =25℃, I =750A, Inst. measurement
Junction to case
Rth(j-c)
℃/W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com