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DD2520R-LF PDF预览

DD2520R-LF

更新时间： 2024-11-19 20:43:39
品牌 Logo 应用领域
WTE 局域网二极管
页数 文件大小 规格书
2页 41K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 25A, 16V V(RRM), Silicon,

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DD2520R-LF 数据手册

 浏览型号DD2520R-LF的Datasheet PDF文件第2页 
WTE  
POWER SEMICONDUCTORS  
DD2520/S & DD2524/S  
25A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE  
Features  
ꢀ
Glass Passivated Die Construction  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Low Leakage  
Low Cost  
High Surge Current Capability  
Low Forward  
C-Band Terminal Construction  
C
Anode +  
D
Mechanical Data  
B
ꢀ
Case: 8.4mm or 9.5mm Dish Type Press-Fit  
with Silicon Rubber Sealed on Top  
A
ꢀ
ꢀ
Terminals: Contact Areas Readily Solderable  
Polarity: Cathode to Case (Reverse Units Are  
Available Upon Request and Are Designated  
By A “R” Suffix, i.e. DD2520R or DD2520SR)  
Polarity: White Color Equals Standard,  
Black Color Equals Reverse Polarity  
8.4mm Dish  
9.5mm Dish  
Dim  
A
Min  
8.25  
2.00  
Max  
Min  
9.30  
2.00  
Max  
9.70  
2.40  
8.45  
2.40  
ꢀ
B
C
1.50 Ø Typical  
ꢀ
ꢀ
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
D (+)*  
D (-)*  
17.50  
21.50  
20.50  
24.50  
17.50  
21.50  
20.50  
24.50  
All Dimensions in mm  
“S” Suffix Designates 8.4mm Dish  
No Suffix Designates 9.5mm Dish  
(+)*: Standard Polarity; (-)*: Reverse Polarity  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
DD2520/S  
DD2524/S  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
16  
20  
V
Average Rectified Output Current  
@TC = 120°C  
IO  
25  
A
V
Breakdown Voltage Min.  
Breakdown Voltage Max.  
@IR = 100mA  
@IR = 100mA  
20  
26  
24  
32  
VBR  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
300  
A
Forward Voltage  
@IF = 25A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
200  
nA  
@TA = 25°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
300  
1.0  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +175  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance: Junction to case, single side cooled.  
DD2520/S & DD2524/S  
1 of 2  
© 2006 Won-Top Electronics  
12

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