Datasheet > DD252R-LF

DD252R-LF

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
2页	42K
描述
Rectifier Diode,

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中文翻译

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数据手册

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DD252R-LF 数据手册

WTE

POWER SEMICONDUCTORS

DD250/S – DD256/S

25A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE

Features

ꢀ

Glass Passivated Die Construction

ꢀ

Low Leakage

Low Cost

High Surge Current Capability

Low Forward

C-Band Terminal Construction

Anode +

Mechanical Data

ꢀ

Case: 8.4mm or 9.5mm Dish Type Press-Fit

with Silicon Rubber Sealed on Top

ꢀ

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case (Reverse Units Are

Available Upon Request and Are Designated

By A “R” Suffix, i.e. DD250R or DD250SR)

Polarity: White Color Equals Standard,

Black Color Equals Reverse Polarity

8.4mm Dish

9.5mm Dish

Dim

Min

8.25

2.00

Max

Min

9.30

2.00

Max

9.70

2.40

8.45

2.40

ꢀ

1.50 Ø Typical

ꢀ

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

D (+)*

D (-)*

17.50

21.50

20.50

24.50

17.50

21.50

20.50

24.50

All Dimensions in mm

“S” Suffix Designates 8.4mm Dish

No Suffix Designates 9.5mm Dish

(+)*: Standard Polarity; (-)*: Reverse Polarity

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

DD250/ DD251/ DD252/ DD253/ DD254/ DD255/ DD256/

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

V^RWM

V^R

100

200

300

400

500

600

RMS Reverse Voltage

VR(RMS)

140

210

280

350

420

Average Rectified Output Current @T_C= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

300

1.0

Forward Voltage

@I_F= 25A

VFM

I^RM

Peak Reverse Current

@T_A= 25°C

5.0

500

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

300

1.0

°C/W

°C

RθJC

TJ, TSTG

-65 to +175

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

DD250/S – DD256/S

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