Datasheet > DBF250_10

DBF250_10

更新时间： 2024-11-28 10:00:35

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三洋 - SANYO		/
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描述
25A Single-Phase Bridge Rectifier

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DBF250_10 数据手册

Ordering number : EN6567A

DBF250

SANYO Sem iconductors

DATA S HEET

Diffused Junction Silicon Diode

DBF250

25A Single-Phase Bridge Rectifier

Features

•

Glass passivation for high reliability.

Plastic molded structure.

•

• Peak reverse voltage : V

=200, 600V.

• Average output current : I =25A.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Peak Reverse Voltage

Symbol

Conditions

DBF250C

200

DBF250G

600

Unit

Tc=98°C, With heatsink

➝

3.5

Average Output Current

Ta=25°C, Without heatsink

50Hz sine 1cycle peak value

Surge Forward Current

Junction Temperature

Storage Temperature

Dilective Strength Voltage

Tightening Torque

350

FSM

150

°C

N•m

Tstg

--40 to +150

2.5

Vdis

TOR

Terminals tc case, AC 1 minute

( ): recommended value

0.8(0.5)

Electrical Characteristics at Ta=25°C Per Constituent element of bridge.

Ratings

typ

Parameter

Forward Voltage

Symbol

Conditions

Unit

min

max

1.05

I =12.5A

Reverse Current

=At each V

μA

Thremal Resistance(Junction-Ambient)

Thremal Resistance(Junction-Case)

Thremal Resistance(Junction-Lead)

Rth(j-a)

Rth(j-c)

Rth(j-l)

Without heatsink

With heatsink

°C / W

Without heatsink

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83006RB MS IM TC-00000159 / 42800 GI IM No.6567-1/3

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