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DBF250G

更新时间： 2024-11-28 14:37:47
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 94K
描述
3.5A, SILICON, BRIDGE RECTIFIER DIODE

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中文翻译

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DBF250G 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：not_compliantHTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：5.51
Is Samacsys：N其他特性：HIGH RELIABILITY
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODEJESD-30 代码：R-PSIP-T4
JESD-609代码：e6最大非重复峰值正向电流：350 A
元件数量：4相数：1
端子数量：4最大输出电流：3.5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Bismuth (Sn/Bi)
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

DBF250G 数据手册

 浏览型号DBF250G的Datasheet PDF文件第2页浏览型号DBF250G的Datasheet PDF文件第3页 
Ordering number : EN6567A  
SANYO Sem iconductors  
DATA S HEET  
Diffused Junction Silicon Diode  
DBF250  
25A Single-Phase Bridge Rectifier  
Features  
•
Glass passivation for high reliability.  
Plastic molded structure.  
•
• Peak reverse voltage : V  
=200, 600V.  
RM  
• Average output current : I =25A.  
O
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Peak Reverse Voltage  
Symbol  
Conditions  
DBF250C  
200  
DBF250G  
600  
Unit  
V
V
RM  
Tc=98°C, With heatsink  
➝
➝
➝
➝
➝
➝
➝
25  
3.5  
A
Average Output Current  
I
O
Ta=25°C, Without heatsink  
50Hz sine 1cycle peak value  
A
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Dilective Strength Voltage  
Tightening Torque  
I
350  
A
FSM  
Tj  
150  
°C  
°C  
kV  
N•m  
Tstg  
--40 to +150  
2.5  
Vdis  
TOR  
Terminals tc case, AC 1 minute  
( ): recommended value  
0.8(0.5)  
Electrical Characteristics at Ta=25°C Per Constituent element of bridge.  
Ratings  
typ  
Parameter  
Forward Voltage  
Symbol  
Conditions  
Unit  
min  
max  
1.05  
10  
22  
1
V
F
I =12.5A  
V
F
Reverse Current  
I
R
V
R
=At each V  
RM  
μA  
Thremal Resistance(Junction-Ambient)  
Thremal Resistance(Junction-Case)  
Thremal Resistance(Junction-Lead)  
Rth(j-a)  
Rth(j-c)  
Rth(j-l)  
Without heatsink  
With heatsink  
°C / W  
°C / W  
°C / W  
Without heatsink  
5
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
83006RB MS IM TC-00000159 / 42800 GI IM No.6567-1/3  
123

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