Datasheet > DB3_07

DB3_07

更新时间： 2024-11-13 03:28:47

品牌	Logo	应用领域
德欧泰克 - DIOTEC		二极管
页数	文件大小	规格书
2页	90K
描述
Bidirectional Si-Trigger-Diodes

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中文翻译

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数据手册

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DB3_07 数据手册

DB3 ... DB4

Bidirectional Si-Trigger-Diodes (DIAC)

Bidirektionale Si-Triggerdioden (DIAC)

Version 2006-04-27

Breakover voltage

Durchbruchspannung

28 ... 45 V

± 2 A

Peak pulse current

Max. Triggerimpuls

Ø 1.9

Glass case

Glas-Gehäuse

DO-35

SOD-27

Weight approx.

Gewicht ca.

0.13 g

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Ø 0.52

Dimensions - Maße [mm]

Maximum ratings

Grenzwerte

Power dissipation

Verlustleistung

T_A= 50°C

P_tot

I_PM

150 mW ¹)

Peak pulse current (120 Hz pulse repetition rate)

Max. Triggerstrom (120 Hz Puls-Wiederholrate)

t_p≤ 10 µs

± 2 A ¹)

Operating Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

-50...+100°C

-50...+175°C

Characteristics

Kennwerte

Breakover voltage

Durchbruchspannung

dV/dt = 10 V/µs

DB3

DB4

V_BO

28 ... 36 V

35 ... 45 V

Breakover current – Durchbruchstrom

V = 98% V_BO

|V_(BO)F– V_(BO)R

I_BO

< 200 µA

< 3.8 V

Asymmetry of breakover voltage

ΔV_BO

Unsymmetrie der Durchbruchspannung

Foldback voltage – Spannungs-Rücksprung

dV/dt = 10 V/µs

ΔV_F/R

> 5 V

ΔI = I_BOto/auf I_F= 10 mA

Thermal resistance junction to ambient air

R_thA

< 300 K/W ¹)

Wärmewiderstand Sperrschicht – umgebende Luft

Valid, if leads are kept at ambient temperature at a distance of 10 mm from case

Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

中文翻译

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