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DB3_1 PDF预览

DB3_1

更新时间: 2024-11-13 12:52:55
品牌 Logo 应用领域
辰达行 - MDD 二极管双向触发二极管
页数 文件大小 规格书
2页 73K
描述
BIDIRECTIONAL TRIGGER DIODE Low breakover current

DB3_1 数据手册

 浏览型号DB3_1的Datasheet PDF文件第2页 
DB3  
BIDIRECTIONAL TRIGGER DIODE  
Reverse Voltage - 32 Volts Power: 150mW  
FEATURES  
DO-41  
A-405  
The plastic package  
VBO:28-36V version  
1.0 (25.4)  
MIN.  
1.0 (25.4)  
MIN.  
Low breakover current  
High temperature soldering guaranteed  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160(4.1)  
0.205 (5.2)  
0.160(4.1)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-41/A-405 plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Mounting Position: Any  
Weight:DO-41 0.012 ounce, 0.33gram  
A-405 0.008 ounce, 0.23gram  
0.034 (0.86)  
0.028 (0.70)  
DIA.  
0.025 (0.65)  
0.021 (0.55)  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
VALUE  
Typ.  
32  
TEST  
SYMBOLS  
UNITS  
MDD Catalog  
Number  
CONDITION  
C=22nF **  
C=22nF **  
(NOTE 1)  
DIAGRAM2  
C=22nF **  
DIAGRAM3  
VR=0.5VBO  
TA=65 C  
Min.  
28  
-3  
Max.  
36  
Breakover voltage *  
VBO  
VOLTS  
VOLTS  
VOLTS  
VOLTS  
µA  
Breakover voltage symmetry  
Dynamic breakover voltage *  
Output voltage *  
I+VBOI-I-VBO I  
3
I V + I  
5
VO  
IBO  
tr  
5
Breakover current *  
100  
Rise time *  
1.5  
µS  
Leakage current *  
IB  
10  
µA  
Power dissipation on printed circuit  
Pd  
150  
mW  
tp=20µs  
A
Repetitive peak on-state current  
ITRM  
2
f=100Hz  
Thermal Resistances from Junction to ambient  
Thermal Resistances from Junction to lead  
Operating junction and storage temperature range  
RΘJA  
RΘJL  
400  
150  
125  
C/W  
C
TJ,TSTG  
-40  
*
:Electrical characteristic appoicaboe in forward and reverse directions.  
** :Connected in parallel with the devices.  
Note 1:IBO from IBO to 10mA  
MDD ELECTRONIC  

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