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DB106-BP PDF预览

DB106-BP

更新时间: 2024-12-01 13:07:19
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 244K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, DB-1, 4 PIN

DB106-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:DB-1, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.77Is Samacsys:N
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDIP-T4
JESD-609代码:e3最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DB106-BP 数据手册

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DB101  
THRU  
DB107  
M C C  
Micro Commercial Components  
TM  
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20736 Marilla Street Chatsworth  
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Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
1 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
RoHS Compliant. See ordering information)  
4-PIN DIP Package  
·
Glass Passivated Diode Construction  
UL Recognized File # E165989  
High Surge Current Capability  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
50 to 1000 Volts  
·
DB-1  
Maximum Ratings  
·
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Notch  
Thermal Resistance : Rthja: 40C/W;RthJL:15C/W.  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
+
-
B
C
~
~
DB101  
DB102  
DB103  
DB104  
DB105  
DB106  
DB107  
DB101  
DB102  
DB103  
DB104  
DB105  
DB106  
DB107  
35V  
70V  
100V  
200V  
100V  
200V  
A
140V  
280V  
420V  
560V  
700V  
400V  
600V  
400V  
600V  
E
D
F
800V  
1000V  
800V  
1000V  
G
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
1 A  
Average Forward  
Current  
IF(AV)  
TA = 40°C  
DIMENSIONS  
MM  
INCHES  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IFSM  
50A  
8.3ms, half sine  
DIM  
A
MIN  
.316  
.245  
.300  
.236  
.102  
MAX  
.335  
MIN  
8.05  
6.20  
7.60  
6.01  
2.60  
MAX  
8.51  
6.50  
8.90  
7.60  
3.30  
NOTE  
B
.255  
.350  
.299  
.130  
C
VF  
1.1V  
IFM = 1.0A;  
TJ = 25°C  
D
E
.060  
1.50  
Typ  
Typ  
F
G
.016  
.195  
.022  
.205  
.41  
.56  
5.20  
5.00  
H
IR  
10µA  
0.5mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
25pF  
Measured at  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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