生命周期: | Transferred | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.71 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
最大非重复峰值反向功率耗散: | 1800 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 认证状态: | Not Qualified |
表面贴装: | NO | 技术: | ZENER |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DAM3A39 | RENESAS |
获取价格 |
1800W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
DAM3A51 | HITACHI |
获取价格 |
Trans Voltage Suppressor Diode, 1800W, Unidirectional, 1 Element, Silicon | |
DAM3A51 | RENESAS |
获取价格 |
1800W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
DAM3B10 | HITACHI |
获取价格 |
Trans Voltage Suppressor Diode, 1800W, Unidirectional, 1 Element, Silicon | |
DAM3B10 | RENESAS |
获取价格 |
1800W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
DAM3B11 | HITACHI |
获取价格 |
Trans Voltage Suppressor Diode, 1800W, Unidirectional, 1 Element, Silicon | |
DAM3B11 | RENESAS |
获取价格 |
1800W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
DAM3B12 | RENESAS |
获取价格 |
1800 W, UNIDIRECTIONAL, SILICON, TVS DIODE | |
DAM3B12 | HITACHI |
获取价格 |
Trans Voltage Suppressor Diode, 1800W, Unidirectional, 1 Element, Silicon | |
DAM3B13 | RENESAS |
获取价格 |
1800W, UNIDIRECTIONAL, SILICON, TVS DIODE |