Datasheet > DAM3B39

DAM3B39

更新时间： 2024-11-11 20:58:59

品牌	Logo	应用领域
日立 - HITACHI		测试二极管
页数	文件大小	规格书
3页	39K
描述
Trans Voltage Suppressor Diode, 1800W, Unidirectional, 1 Element, Silicon

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数据手册

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DAM3B39 数据手册

SURGE SUPPRESSOR DIODE

DAM3B

FEATURES

OUTLINE DRAWING

• High transient reverse power capability

suitable for protecting automobile electronic

components etc.

Unit in mm(inch)

Direction of polarity

• Diffused-junction. Resin encapsulated.

0.8

(0.03)

27CA

Weight: 0.50 (g)

ABSOLUTE MAXIMUM RATINGS

Ratings

Items

Symbols Units

Non-Repetitive Peak Reverse One-

Cycle Dissipation

P_RSM

1800(Rectangular pulse t=0.1ms T_j=25°C start)

°C

Operating Junction Temperature

Storage Temperature

T_j

-40 ~ +150

T_stg

V_DC

Refer to characteristics column

DC Reverse Voltage

CHARACTERISTICS(T_L=25°C)

Characteristics

Maximum

Reverse

Current

Reverse

Zener Voltage Vz (V)

Maximum

Dynamic

Impedance

Zz (ohm)

Test Current

Type

Voltage

V_DC

(V)

(mA)

Minimum

Maximum

I_RRM

(µA)

V_R

(V)

DAM3B10

DAM3B11

DAM3B12

DAM3B13

DAM3B15

DAM3B16

DAM3B18

DAM3B20

DAM3B22

DAM3B24

DAM3B27

DAM3B30

DAM3B33

DAM3B36

DAM3B39

DAM3B43

DAM3B47

DAM3B51

9.4

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

32.0

35.0

38.6

41.9

46.2

50.7

55.1

10.4

11.4

12.4

13.5

15.3

16.8

18.8

20.8

22.7

25.1

28.0

31.0

33.4

36.1

39.8

43.3

46.9

PDE-DAM3B-0

12 3

中文翻译

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