5秒后页面跳转
D60V0L4B10LP PDF预览

D60V0L4B10LP

更新时间: 2023-12-06 20:11:01
品牌 Logo 应用领域
美台 - DIODES 电视
页数 文件大小 规格书
6页 852K
描述
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

D60V0L4B10LP 数据手册

 浏览型号D60V0L4B10LP的Datasheet PDF文件第1页浏览型号D60V0L4B10LP的Datasheet PDF文件第3页浏览型号D60V0L4B10LP的Datasheet PDF文件第4页浏览型号D60V0L4B10LP的Datasheet PDF文件第5页浏览型号D60V0L4B10LP的Datasheet PDF文件第6页 
D60V0L4B10LP  
Marking Information  
Site 2  
Sites 1 and 3  
QD4 = Product Type Marking Code  
YWX = Date Code Marking  
Y = Year (ex: 3 = 2023)  
QD4 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: K = 2023)  
YM  
QD4  
YWX  
QD4  
W = Week  
M = Month (ex: 9 = September)  
(ex: a=Week 27; z Represents Week 52 and 53)  
X = Internal Code (ex: U=Monday)  
Date Code Key for YM  
Year  
2017  
-
2023  
2024  
2025  
2026  
2027  
2028  
2029  
2030  
2031  
2032  
Code  
E
-
K
L
M
N
P
R
S
T
U
V
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key for YWX  
Year  
2017  
-
2023  
2024  
2025  
2026  
2027  
2028  
2029  
2030  
2031  
2032  
Code  
7
-
3
4
5
6
7
8
9
0
1
2
Week  
Code  
1-26  
27-52  
53  
A-Z  
a-z  
z
Internal Code  
Code  
Sun  
Mon  
Tue  
Wed  
Thu  
Fri  
Sat  
T
U
V
W
X
Y
Z
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)  
Characteristic  
ESD Contact Discharge  
Symbol  
VESD  
IPP  
Value  
Unit  
kV  
A
Conditions  
Standard IEC 61000-4-2  
8
2
Standard IEC 61000-4-5,8/20μs  
Peak Pulse Current  
Operating Temperature Range  
Storage Temperature Range  
-40 to +125  
-65 to +150  
°C  
°C  
TOP  
TSTG  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
350  
Unit  
mW  
Power Dissipation Typical (Note 5)  
Thermal Resistance, Junction to Ambient Typical (Note 5)  
Thermal Resistance, Junction to Case Typical (Note 5)  
360  
°C/W  
°C/W  
RJA  
220  
RJC  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Reverse Standoff Voltage  
Symbol  
VRWM  
IRM  
Min  
Typ  
Max  
60  
Unit  
V
Test Conditions  
Channel Leakage Current (Note 6)  
Clamping Voltage, Positive Transients  
Breakdown Voltage  
100  
125  
85  
nA  
V
VRWM = 60V  
 
65  
115  
75  
VCL  
IPP = 2A, tp = 8/20μs  
IR = 1mA  
V
VBR  
Channel Input Capacitance  
10  
12  
pF  
CT  
VR = 0V, f = 1MHz  
Notes:  
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at  
http://www.diodes.com/package-outlines.html.  
6. Short duration pulse test used to minimize self-heating effect.  
2 of 6  
www.diodes.com  
June 2023  
D60V0L4B10LP  
© 2023 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS40522 Rev. 2 - 2  

与D60V0L4B10LP相关器件

型号 品牌 描述 获取价格 数据表
D60VC100 DIOTEC Silicon-Twin Rectifiers

获取价格

D60VC100F DIOTEC

获取价格

D60VC120 DIOTEC Silicon-Twin Rectifiers

获取价格

D60VC120F DIOTEC

获取价格

D60VC20 DIOTEC Silicon-Twin Rectifiers

获取价格

D60VC20_06 DIOTEC Silicon-Twin-Rectifiers

获取价格