Datasheet > D5SBA10

D5SBA10

更新时间： 2024-11-14 03:28:23

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	172K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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数据手册

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D5SBA10 数据手册

D5SBA10 ~ D5SBA60

SILICON BRIDGE RECTIFIERS

RBV25

PRV : 100 ~ 600 Volts

Io : 6 Amperes

3.9 ± 0.2

30 ± 0.3

4.9 ± 0.2

Æ 3.2 ± 0.1

FEATURES :

* High current capability

* High surge current capability

* High reliability

~ ~

* Low reverse current

* Low forward voltage drop

* Ideal for printed circuit board

* Very good heat dissipation

* Pb / RoHS Free

1.0 ± 0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

10 7.5 7.5

±0.2 ±0.2 ±0.2

2.0 ± 0.2

0.7 ± 0.1

Dimensions in millimeters

* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25°C ambient temperature unless otherwise specified.

RATING

Maximum Reverse Voltage

SYMBOL D5SBA10 D5SBA20 D5SBA40 D5SBA60 UNIT

VRM

100

200

400

600

Maximum Average Forward Current

6 (With heatsink, Tc = 110°C)

IF(AV)

(50Hz Sine wave, R-load)

2.8 (Without heatsink, Ta = 25°C)

Maximum Peak Forward Surge Current, Tj = 25°C

(50Hz sine wave, Non-repetitive 1 cycle peak value)

Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C

Maximum Forward Voltage per Diode at IF = 3.0 A

Maximum DC Reverse Current, VR=VRM

( Pulse measurement, Rating of per diode)

Maximum Thermal Resistance, Junction to case

Maximum Thermal Resistance, Junction to Ambient

Operating Junction Temperature

IFSM

120

I²t

A²S

1.05

3.4 (With heatsink)

26 (Without heatsink)

150

°C/W

°C

RqJC

RqJA

Storage Temperature Range

TSTG

- 40 to + 150

°C

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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