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D3SBA10 PDF预览

D3SBA10

更新时间: 2024-10-29 03:28:11
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EIC /
页数 文件大小 规格书
2页 57K
描述
SILICON BRIDGE RECTIFIER

D3SBA10 数据手册

 浏览型号D3SBA10的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIER  
D3SBA10 ~ D3SBA80  
0.150 (3.8)  
0.134 (3.4)  
0.189 (4.8)  
0.173 (4.4)  
PRV : 100 ~ 800 Volts  
Io : 4.0 Amperes  
C3  
0.996 (25.3)  
0.972 (24.7)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Very good heat dissipation  
* Pb / RoHS Free  
+
~ ~  
0.075 (1.9)  
0.060 (1.5)  
0.043 (1.1)  
0.035 (0.9)  
0.114 (2.9)  
0.098 (2.5)  
0.303 (7.7)  
0.287 (7.3)  
MECHANICAL DATA :  
0.032 (0.8)  
0.043 (1.1)  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in inches and (millimeters)  
* Weight : 4.28 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
D3SBA D3SBA D3SBA D3SBA D3SBA  
RATING  
Maximum Reverse Voltage  
SYMBOL  
VRM  
UNIT  
10  
20  
40  
60  
80  
100  
200  
400  
600  
800  
V
A
Maximum Average Forward Current  
4 (With heatsink, Tc = 108°C)  
IF(AV)  
(50Hz Sine wave, R-load)  
2.3 (Without heatsink, Ta = 25°C)  
Maximum Peak Forward Surge Current  
( 50 Hz, Half-cycle, Sinwave, Single Shot )  
Current Squared Time at 1ms t < 10 ms, Tc=25°C  
Maximum Forward Voltage per Diode at IF = 2.0 A.  
Maximum DC Reverse Current, VR=VRM  
( Pulse measurement, Rating of per diode)  
Maximum Thermal Resistance, Junction to case  
Maximum Thermal Resistance, Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
IFSM  
80  
A
I2t  
A2S  
V
32  
VF  
1.05  
IR  
10  
mA  
5.5 (With heatsink)  
30 (Without heatsink)  
150  
°C/W  
°C/W  
°C  
RqJC  
RqJA  
TJ  
TSTG  
- 40 to + 150  
°C  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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