SILICON BRIDGE RECTIFIER
D3SBA10 ~ D3SBA80
0.150 (3.8)
0.134 (3.4)
0.189 (4.8)
0.173 (4.4)
PRV : 100 ~ 800 Volts
Io : 4.0 Amperes
C3
0.996 (25.3)
0.972 (24.7)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
+
~ ~
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0.114 (2.9)
0.098 (2.5)
0.303 (7.7)
0.287 (7.3)
MECHANICAL DATA :
0.032 (0.8)
0.043 (1.1)
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in inches and (millimeters)
* Weight : 4.28 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
D3SBA D3SBA D3SBA D3SBA D3SBA
RATING
Maximum Reverse Voltage
SYMBOL
VRM
UNIT
10
20
40
60
80
100
200
400
600
800
V
A
Maximum Average Forward Current
4 (With heatsink, Tc = 108°C)
IF(AV)
(50Hz Sine wave, R-load)
2.3 (Without heatsink, Ta = 25°C)
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C
Maximum Forward Voltage per Diode at IF = 2.0 A.
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
Maximum Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
IFSM
80
A
I2t
A2S
V
32
VF
1.05
IR
10
mA
5.5 (With heatsink)
30 (Without heatsink)
150
°C/W
°C/W
°C
RqJC
RqJA
TJ
TSTG
- 40 to + 150
°C
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Rev. 02 : March 25, 2005