Datasheet > D3000D

D3000D

更新时间： 2024-10-29 01:21:51

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
5页	658K
描述
Standard Recovery Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

D3000D 数据手册

RoHS

D3000D Series

Nell High Power Products

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

3000(1550)

55(85)

UNIT

ºC

Maximum average forward current

at heatsink temperature

180° conduction, half sine wave

I_F(AV)

Double side (single side) cooled

I_F(RMS)

25°C heatsink temperature double side cooled

Maximum RMS forward current

5000

31000

32460

26040

27270

4805

4375

3390

3090

48050

0.76

t = 10ms

No voltage

reapplied

t = 8.3ms

Maximum peak, one cycle

non-reptitive surge current

I_FSM

t = 10ms

100%V_RRM

reapplied

t = 8.3ms

Sinusoidal half wave,

initial T_J= T_Jmaximum

t = 10ms

No voltage

reapplied

t = 8.3ms

kA s

Maximum l²t for fusing

I t

t = 10ms

100%V_RRM

reapplied

t = 8.3ms

I √t

kA √s

t = 0.1 to 10 ms, no voltage reapplied

(16.7% x π x l_F(AV)< I < π x l_F(AV)),T_J=T_Jmaximum

(I > π x l_F(AV)),T_J=T_Jmaximum

Maximum l²√t for fusing

Low level value of threshold voltage

High level value of threshold voltage

Low level value of forward slope resistance

High level value of forward slope resistance

F(TO)1

mΩ

F(TO)2

0.97

r_t1

r_t2

(16.7% x π x l_F(AV)< I < π x l_F(AV)),T_J=T_Jmaximum

(I > π x l_F(AV)),T_J=T_Jmaximum

0.16

0.13

l_pk= 4000A,T_J=T_Jmaximum_,

t_p= 10 ms sinusoidal wave

Maximum forward voltage drop

V_FM

1.41

THERMAL AND MECHANICAL SPECIFICATIONS

SYMBOL

TEST CONDITIONS

VALUES

-40 to 180

-55 to 200

0.042

UNIT

PARAMETER

Maximum junction operating temperature range

Maximum storage temperature range

T_J

ºC

T_stg

DC operation single side cooled

DC operation double side cooled

Maximum thermal resistance, junction to heatsink

R_thJ-hs

K/W

0.020

22250

(2250)

Mounting force, ±10%

(kg)

Approximate weight

Case style

425

TO-200AC (K-PUK), Nell’s D-type Capsule

RthJC CONDUCTION

SINUSOIDAL CONDUCTION

CONDUCTION ANGEL

RECTANGULAR CONDUCTION

TEST CONDUCTIONS

UNITS

SINGLE SIDE DOUBLE SIDE

SINGLE SIDE

DOUBLE SIDE

180°

120°

90°

0.002

0.003

0.004

0.007

0.002

0.003

0.004

0.007

0.001

0.002

0.003

0.004

0.007

0.001

0.002

0.003

0.004

T_J= T_Jmaximum

K/W

60°

30°

0.007

Note

• The table above shows the increment of thermal resistance R_thJ-hswhen devices operate at different conduction angles than DC

Page 2 of 5

www.nellsemi.com

123 4 5

中文翻译

下载PDF

与D3000D相关器件

型号	品牌	获取价格	描述	数据表
D3000D_17	NELLSEMI	获取价格	Standard Recovery Diodes
D-300-12	PANDUIT	获取价格	CAP, SPLICE ENCAPSULATION
D-300-12-ND	PANDUIT	获取价格	CAP, SPLICE ENCAPSULATION
D-300-18	PANDUIT	获取价格	CAP, SPLICE ENCAPSULATION
D3001N	EUPEC	获取价格	Rectifier Diode
D3001N58T	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3840A, 5800V V(RRM), Silicon,
D3001N58TXPSA1	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3840A, 5800V V(RRM), Silicon,
D3001N60T	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3840A, 6000V V(RRM), Silicon,
D3001N62T	INFINEON	获取价格	Rectifier Diode, 1 Element, 4040A, 6200V V(RRM),
D3001N65T	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 4040A, 6500V V(RRM), Silicon,