5秒后页面跳转
D2228N06T PDF预览

D2228N06T

更新时间: 2024-09-17 20:11:35
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
8页 193K
描述
Rectifier Diode, 1 Phase, 1 Element, 2548A, 600V V(RRM), Silicon,

D2228N06T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-XEDB-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.57 V
JESD-30 代码:O-XEDB-N2最大非重复峰值正向电流:28500 A
元件数量:1相数:1
端子数量:2最高工作温度:180 °C
最大输出电流:2548 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Rectifier Diodes
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

D2228N06T 数据手册

 浏览型号D2228N06T的Datasheet PDF文件第2页浏览型号D2228N06T的Datasheet PDF文件第3页浏览型号D2228N06T的Datasheet PDF文件第4页浏览型号D2228N06T的Datasheet PDF文件第5页浏览型号D2228N06T的Datasheet PDF文件第6页浏览型号D2228N06T的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Gleichrichterdiode  
Rectifier Diode  
D2228N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / maximum rated values  
VRRM  
IFRMSM  
IFAVM  
IFSM  
400 V  
600 V  
Tvj = -40°C... Tvj max  
PeriodischeSpitzensperrspannung  
repetitive peak reverse voltages  
Durchlaßstrom-Grenzeffektivwert  
4000 A  
maximum RMS on-state current  
TC = 110 °C  
TC = 95 °C  
Dauergrenzstrom  
average on-state current  
2230 A  
2548 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
33000 A  
28500 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
5445 10³A²s  
4061 10³A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max , iF = 7,7 kA  
Tvj = Tvj max , iF = 2,0 kA  
vF  
max.  
max.  
1,5 V  
0,88 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,7 V  
m  
0,0975  
Ersatzwiderstand  
slope resistance  
A=  
B=  
C=  
D=  
1,154E+00  
3,499E-05  
-1,228E-01  
1,338E-02  
Durchlaßkennlinie  
on-state characteristic  
600 A iF 11000 A  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
50 mA  
Thermische Eigenschaften / Thermal properties  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
Anode / anode, θ = 180°sin  
Anode / anode, DC  
RthJC  
Innerer Wärmewiderstand  
max. 0,0253 °C/W  
max. 0,0240 °C/W  
max. 0,0414 °C/W  
max. 0,0400 °C/W  
max. 0,0614 °C/W  
max. 0,0600 °C/W  
thermal resistance, junction to case  
Kathode / cathode, θ = 180°sin  
Kathode / cathode, DC  
Kühlfläche / cooling surface  
beidseitig / two-sided  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCH  
0,005  
0,010  
max.  
max.  
°C/W  
°C/W  
einseitig / single-sided  
180  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Betriebstemperatur  
Tvj max  
Tc op  
°C  
-40...+150 °C  
-40...+150 °C  
operating temperature  
Tstg  
Lagertemperatur  
storage temperature  
H.Sandmann  
date of publication: 2007-10-22  
prepared by:  
revision:  
1
approved by: J.Przybilla  
1/8  
Seite/page  
MA2-BE, 09.09.94, R.Jörke  
A41/94  

与D2228N06T相关器件

型号 品牌 获取价格 描述 数据表
D2228N08T INFINEON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 2550A, 800V V(RRM), Silicon,
D2229UK SEME-LAB

获取价格

METAL GATE RF SILICON FET
D2229UK TTELEC

获取价格

Gold metallised multi-purpose silicon DMOS RF FET
D222E MPD

获取价格

Low Cost, 2W SIP Single & Dual Output DC/DC Converters
D222ED MPD

获取价格

Very Low Cost, 2W SIP Dual Isolated Output DC/DC Converters
D222EI MPD

获取价格

Low Cost, 2W SIP High Isolation DC/DC Converters
D222ERW MPD

获取价格

Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers
D222F1001F AMPHENOL

获取价格

Interconnection Device
D222F1001I AMPHENOL

获取价格

Interconnection Device
D222F1001M AMPHENOL

获取价格

Interconnection Device