Datasheet > D2012UK

D2012UK

更新时间： 2023-12-06 20:11:15

品牌	Logo	应用领域
TTELEC		/
页数	文件大小	规格书
4页	56K
描述
Gold metallised multi-purpose silicon DMOS RF FET

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D2012UK 数据手册

D2012UK

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter

Test Conditions

Min.

Typ.

Max. Unit

Drain–Source

= 0

= 10mA

DSS

Breakdown Voltage

Zero Gate Voltage

= 28V

= 20V

= 0

0.8

DSS

Drain Current

Gate Leakage Current

Gate Threshold Voltage*

Forward Transconductance*

Common Source Power Gain

Drain Efficiency

= 0

= V

µA

GSS

= 10mA

= 10V

GS(th)

= 0.8A

0.72

= 10W

= 28V

= 0.4A

VSWR Load Mismatch Tolerance

f = 1GHz

= 0

20:1

—

Input Capacitance

= –5V f = 1MHz

iss

Output Capacitance

= 28V

= 0

f = 1MHz

oss

rss

Reverse Transfer Capacitance

= 0f = 1MHz

* Pulse Test:

Pulse Duration = 300 µs , Duty Cycle ≤ 2%

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

Thermal Resistance Junction – Case

Max. 4.2°C / W

THj–case

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 12/00

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