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CZT900K PDF预览

CZT900K

更新时间: 2024-12-01 03:27:51
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
2页 74K
描述
SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR

CZT900K 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.89Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:25 V配置:DARLINGTON
最小直流电流增益 (hFE):900000JESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

CZT900K 数据手册

 浏览型号CZT900K的Datasheet PDF文件第2页 
TM  
Central  
CZT900K  
Semiconductor Corp.  
SURFACE MOUNT  
NPN EXTREMELY HIGH h  
FE  
SILICON DARLINGTON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT900K  
type is an NPN silicon Darlington transistor man-  
ufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
applications requiring extremely high gain.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
50  
25  
10  
1.0  
2.0  
V
CBO  
CEO  
EBO  
C
D
V
V
A
I
P
Power Dissipation  
W
Operating and Storage  
Junction Temperature  
T ,T  
stg  
-65 to +150  
62.5  
°C  
°C/W  
J
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
CBO  
TEST CONDITIONS  
=30V  
MIN  
MAX  
UNITS  
I
V
100  
nA  
CB  
I =10µA  
BV  
BV  
BV  
50  
25  
10  
V
V
V
V
V
CBO  
CEO  
EBO  
C
I =10mA  
C
I =100µA  
E
V
V
I =100mA, I =0.1mA  
1.5  
2.0  
CE(SAT)  
BE(ON)  
FE  
C
B
V
=5.0V, I =100mA  
C
CE  
CE  
CE  
CE  
h
h
V
V
V
=5.0V, I =10mA  
900,000  
900,000  
125  
C
=5.0V, I =100mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
MHz  
T
C
R2 (17-June 2004)  

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