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CZT953TR13 PDF预览

CZT953TR13

更新时间: 2024-09-27 09:50:23
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 745K
描述
Transistor

CZT953TR13 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):5 A
配置:Single最小直流电流增益 (hFE):100
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

CZT953TR13 数据手册

 浏览型号CZT953TR13的Datasheet PDF文件第2页浏览型号CZT953TR13的Datasheet PDF文件第3页 
CZT953  
www.centralsemi.com  
SURFACE MOUNT SILICON  
HIGH CURRENT  
DESCRIPTION:  
PNP TRANSISTOR  
The CENTRAL SEMICONDUCTOR CZT953 is a  
silicon high current PNP transistor manufactured by  
the epitaxial planar process, epoxy molded in a surface  
mount package, designed for high voltage and high  
current amplifier applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
V
V
A
W
°C  
°C/W  
A
V
V
V
140  
100  
6.0  
5.0  
3.0  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation (Note 1)  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
C
P
T
D
T
-65 to +150  
41.7  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
μA  
nA  
nA  
V
V
V
V
mV  
mV  
mV  
mV  
V
I
I
I
I
V
V
V
V
=100V  
=100V, T =100°C  
50  
1.0  
50  
10  
CBO  
CBO  
CER  
EBO  
CB  
CB  
CE  
EB  
A
BE  
=100V, R ≤1.0kΩ  
=6.0V  
BV  
BV  
BV  
BV  
I =100μA  
140  
140  
100  
6.0  
170  
150  
120  
9.0  
20  
CBO  
CER  
CEO  
C
I =10mA, R ≤1.0kΩ  
BE  
C
I =1.0mA (Note 2)  
140  
C
I =100μA  
EBO  
E
V
V
V
V
V
I =100mA, I =10mA  
50  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
B
I =1.0A, I =100mA  
90  
120  
220  
420  
1.2  
C
B
B
B
B
I =2.0A, I =200mA  
170  
320  
1.0  
C
I =4.0A, I =400mA  
C
I =4.0A, I =400mA  
C
h
h
h
h
h
V
=1.0V, I =10mA  
100  
100  
50  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
V
V
=1.0V, I =1.0A  
200  
70  
45  
15  
150  
45  
300  
FE  
FE  
FE  
FE  
C
=1.0V, I =3.0A  
C
=1.0V, I =4.0A  
30  
C
=1.0V, I =10A  
C
f
=10V, I =100mA, f=50MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
E
ob  
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)  
(2) Pulse Test: Pulse Width = 100ꢀs  
R5 (11-June 2013)  

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