Datasheet > CYDC064B16

CYDC064B16

更新时间： 2024-11-24 03:27:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
26页	606K
描述
1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CYDC064B16 数据手册

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

1.8V 4k/8k/16k x 16 and 8k/16k x 8

ConsuMoBL Dual-Port Static RAM

• Lead (Pb)-free 14 x 14 x 1.4 mm 100-pin TQFP Package

Features

• Full asynchronous operation

• True dual-ported memory cells which allow simulta-

neous access of the same memory location

• Pin select for Master or Slave

• Expandable data bus to 32 bits with Master/Slave chip

select when using more than one device

• 4/8/16k × 16 and 8/16k × 8 organization

• High-speed access: 40 ns

• On-chip arbitration logic

• Ultra Low operating power

• On-chip semaphore logic

— Active: I_CC= 15 mA (typical) at 55 ns

— Active: I_CC= 25 mA (typical) at 40 ns

— Standby: I_SB3= 2 µA (typical)

• Input Read Registers and Output Drive Registers

• INT flag for port-to-port communication

• Separate upper-byte and lower-byte control

• Commercial and industrial temperature ranges

• Port-independent 1.8V, 2.5V, and 3.0V I/Os

Selection Guide for V_CC= 1.8V

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

CYDC064B16, CYDC128B08,

CYDC064B08

-40

-55

Port I/O Voltages (P1-P2)

Maximum Access Time

1.8V-1.8V

Unit

Typical Operating Current

Typical Standby Current for I_SB1

Typical Standby Current for I_SB3

µA

Selection Guide for V_CC= 2.5V

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

-40

-55

Port I/O Voltages (P1-P2)

Maximum Access Time

2.5V-2.5V

Unit

Typical Operating Current

Typical Standby Current for I_SB1

Typical Standby Current for I_SB3

µA

Selection Guide for V_CC= 3.0V

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

-40

-55

Port I/O Voltages (P1-P2)

Maximum Access Time

3.0V-3.0V

Unit

Typical Operating Current

Typical Standby Current for I_SB1

Typical Standby Current for I_SB3

µA

Cypress Semiconductor Corporation

Document #: 001-01638 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 25, 2007

[+] Feedback

12 3 4 5 6 7...26

中文翻译

下载PDF

与CYDC064B16相关器件

型号	品牌	获取价格	描述	数据表
CYDC064B16-40AXC	CYPRESS	获取价格	1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
CYDC064B16-40BVXC	CYPRESS	获取价格	Dual-Port SRAM, 4KX16, 40ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC
CYDC064B16-55AXC	CYPRESS	获取价格	1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
CYDC064B16-55AXI	CYPRESS	获取价格	1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
CYDC064B16-55BVXC	CYPRESS	获取价格	Dual-Port SRAM, 4KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC
CYDC064B16-55BVXI	CYPRESS	获取价格	Dual-Port SRAM, 4KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC
CYDC128B08	CYPRESS	获取价格	1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
CYDC128B08-40AXC	CYPRESS	获取价格	1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
CYDC128B08-40BVXC	CYPRESS	获取价格	Dual-Port SRAM, 16KX8, 40ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC
CYDC128B08-55AXC	CYPRESS	获取价格	1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM

与CYDC064B16相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

CYDC064B16

CYDC064B16 数据手册

与CYDC064B16相关器件

与CYDC064B16相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CYDC064B16

CYDC064B16 数据手册

与CYDC064B16相关器件

与CYDC064B16相关文章

您还可以找

您在本页遇到什么问题？