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CYDC128B16-55AXI PDF预览

CYDC128B16-55AXI

更新时间: 2024-09-18 03:27:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
26页 606K
描述
1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM

CYDC128B16-55AXI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.78
最长访问时间:55 ns其他特性:IT ALSO OPERATES WITH 2.5V AND 3.3V SUPPLY
I/O 类型:COMMONJESD-30 代码:S-PQFP-G100
JESD-609代码:e4长度:14 mm
内存密度:131072 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端口数量:2
端子数量:100字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP100,.63SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.8/3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.000006 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.025 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

CYDC128B16-55AXI 数据手册

 浏览型号CYDC128B16-55AXI的Datasheet PDF文件第2页浏览型号CYDC128B16-55AXI的Datasheet PDF文件第3页浏览型号CYDC128B16-55AXI的Datasheet PDF文件第4页浏览型号CYDC128B16-55AXI的Datasheet PDF文件第5页浏览型号CYDC128B16-55AXI的Datasheet PDF文件第6页浏览型号CYDC128B16-55AXI的Datasheet PDF文件第7页 
CYDC256B16, CYDC128B16,  
CYDC064B16, CYDC128B08,  
CYDC064B08  
1.8V 4k/8k/16k x 16 and 8k/16k x 8  
ConsuMoBL Dual-Port Static RAM  
• Lead (Pb)-free 14 x 14 x 1.4 mm 100-pin TQFP Package  
Features  
• Full asynchronous operation  
• True dual-ported memory cells which allow simulta-  
neous access of the same memory location  
• Pin select for Master or Slave  
• Expandable data bus to 32 bits with Master/Slave chip  
select when using more than one device  
• 4/8/16k × 16 and 8/16k × 8 organization  
• High-speed access: 40 ns  
• On-chip arbitration logic  
• Ultra Low operating power  
• On-chip semaphore logic  
— Active: ICC = 15 mA (typical) at 55 ns  
— Active: ICC = 25 mA (typical) at 40 ns  
— Standby: ISB3 = 2 µA (typical)  
• Input Read Registers and Output Drive Registers  
• INT flag for port-to-port communication  
• Separate upper-byte and lower-byte control  
• Commercial and industrial temperature ranges  
• Port-independent 1.8V, 2.5V, and 3.0V I/Os  
Selection Guide for VCC = 1.8V  
CYDC256B16, CYDC128B16,  
CYDC256B16, CYDC128B16,  
CYDC064B16, CYDC128B08,  
CYDC064B08  
CYDC064B16, CYDC128B08,  
CYDC064B08  
-40  
-55  
Port I/O Voltages (P1-P2)  
Maximum Access Time  
1.8V-1.8V  
1.8V-1.8V  
Unit  
ns  
40  
25  
2
55  
15  
2
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
mA  
µA  
2
2
µA  
Selection Guide for VCC = 2.5V  
CYDC256B16, CYDC128B16,  
CYDC064B16, CYDC128B08,  
CYDC064B08  
CYDC256B16, CYDC128B16,  
CYDC064B16, CYDC128B08,  
CYDC064B08  
-40  
-55  
Port I/O Voltages (P1-P2)  
Maximum Access Time  
2.5V-2.5V  
2.5V-2.5V  
Unit  
ns  
40  
39  
6
55  
28  
6
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
mA  
µA  
4
4
µA  
Selection Guide for VCC = 3.0V  
CYDC256B16, CYDC128B16,  
CYDC064B16, CYDC128B08,  
CYDC064B08  
CYDC256B16, CYDC128B16,  
CYDC064B16, CYDC128B08,  
CYDC064B08  
-40  
-55  
Port I/O Voltages (P1-P2)  
Maximum Access Time  
3.0V-3.0V  
3.0V-3.0V  
Unit  
ns  
40  
49  
7
55  
42  
7
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
mA  
µA  
6
6
µA  
Cypress Semiconductor Corporation  
Document #: 001-01638 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 25, 2007  
[+] Feedback  

CYDC128B16-55AXI 替代型号

型号 品牌 替代类型 描述 数据表
CY7C025-25AC CYPRESS

完全替代

4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY
CY7C025AV-25AXI CYPRESS

类似代替

3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM
CY7C025AV-25AXC CYPRESS

类似代替

3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM

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