Datasheet > CY81U016X16A7A-7N4FI

CY81U016X16A7A-7N4FI

更新时间： 2024-11-24 20:01:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
14页	205K
描述
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, FBGA-48

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CY81U016X16A7A-7N4FI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	6 X 8 MM, 1 MM HEIGHT, FBGA-48	针数：	48
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.92
最长访问时间：	70 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e0
长度：	8 mm	内存密度：	16777216 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-25 °C	组织：	1MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装等效代码：	BGA48,6X8,30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	240
电源：	1.8/3,2.5/3 V	认证状态：	Not Qualified
座面最大高度：	1 mm	最大待机电流：	0.00008 A
最小待机电流：	2.3 V	子类别：	SRAMs
最大压摆率：	0.02 mA	最大供电电压 (Vsup)：	3.1 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子面层：	TIN LEAD
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	30
宽度：	6 mm	Base Number Matches：	1

CY81U016X16A7A-7N4FI 数据手册

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CY81U016X16A7A

MoBL3™

PRELIMINARY

16M (1M x 16) SRAM

(OE HIGH), or during a write operation (CE LOW and WE

LOW).

Features

• Very high speed: 70 ns

• Advanced low-power MoBL architecture

• Wide voltage range:

Writing to the device is accomplished by taking Chip Enable

(CE) LOW and Write Enable (WE) input LOW. If Byte Low

Enable (BLE) is LOW, then data from I/O pins (I/O₀through

I/O₇), is written into the location specified on the address pins

(A₀through A₁₉). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O₈through I/O₁₅) is written into the location

specified on the address pins (A₀through A₁₉).

— V_CCrange: 2.3V – 3.1V

— V_CCQ(I/O) range: 1.7V – V_CC

• Ultra-low active, standby power

• Easy memory expansion with CE and OE features

• 1T SRAM Memory Cell

• Automatic power-down when deselected

• CMOS for optimum speed/power

Reading from the device is accomplished by taking Chip

Enable (CE) LOW and Output Enable (OE) LOW while forcing

the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is

LOW, then data from the memory location specified by the

address pins will appear on I/O₀to I/O₇. If Byte High Enable

(BHE) is LOW, then data from memory will appear on I/O₈to

I/O₁₅. See the truth table at the back of this datasheet for a

complete description of read and write modes.

Functional Description^[1]

The MoBL3™ is a high-performance CMOS static RAM

organized as 1M words by 16 bits. This device features

advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life™ (MoBL) in

portable applications such as cellular telephones. The device

can be put into standby mode when deselected (CE HIGH, or

both BLE and BHE HIGH). The input/output pins (I/O₀through

I/O₁₅) are placed in a high-impedance state when: deselected

(CE HIGH, or both BLE and BHE HIGH), outputs are disabled

This SRAM has multiple power down functions. The ZZ pin will

put the SRAM into a deep sleep mode, where the data is not

retained in the SRAM. The Variable Address Mode allows the

user to retain data in a section of the SRAM and reduce the

standby current. The CY81U016X16A7A has the deep sleep

mode enabled on Power-up. The VAR register can be used to

disable the deep sleep mode.

The MoBL3™ is available in a 48-ball FBGA package.

Logic Block Diagram

DATA IN DRIVERS

A¹⁰

A₈

A₇

A₆

A₅

A₄

1M x 16

RAM Array

I/O₀–I/O₇

A₃

I/O₈–I/O₁₅

A₂

A₁

A₀

COLUMN DECODER

Refresh/Power-down

Circuit

BHE

BLE

Power-down

Circuit

BHE

BLE

Note:

1. For best practice recommendations, please refer to the CY application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Document #: 38-05308 Rev. **

Revised September 9, 2002

12 3 4 5 6 7...14

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与CY81U016X16A7A-7N4FI相关器件

型号	品牌	获取价格	描述	数据表
CY81U016X16A9A-7N4FI	CYPRESS	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, FBGA-48
CY81U016X16B7A-8N4FII	CYPRESS	获取价格	Standard SRAM, 1MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, FBGA-48
CY81U032X16A9A-7N4FI	CYPRESS	获取价格	Standard SRAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, FBGA-48
CY81U032X16A9A-8N4FI	CYPRESS	获取价格	Standard SRAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, FBGA-48
CY82C597	CYPRESS	获取价格	Multifunction Peripheral, CMOS, PQFP160
CY82C597-NC	CYPRESS	获取价格	Multifunction Peripheral, CMOS, PQFP16, PLASTIC, QFP-160
CY82C599NCR	CYPRESS	获取价格	PCI Bus Controller, CMOS, PQFP160, PLASTIC, QFP-160
CY82C599NCT	CYPRESS	获取价格	PCI Bus Controller, CMOS, PQFP160, PLASTIC, QFP-160
CY82C690-10C	CYPRESS	获取价格	Microprocessor Circuit, CMOS, PQFP208, PLASTIC, QFP-208
CY82C690-NC	ETC	获取价格	Data Path Controller

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