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CY7C2264XV18 PDF预览

CY7C2264XV18

更新时间: 2022-04-06 16:51:02
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
29页 478K
描述
36-Mbit QDR® II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

CY7C2264XV18 数据手册

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CY7C2262XV18, CY7C2264XV18  
seamless transition between devices without the insertion of wait  
states in a depth expanded memory.  
range of RQ to guarantee impedance matching with a tolerance  
of ±15% is between 175 and 350 , with VDDQ = 1.5 V. The  
output impedance is adjusted every 1024 cycles upon power up  
to account for drifts in supply voltage and temperature.  
Write Operations  
Write operations are initiated by asserting WPS active at the  
rising edge of the positive input clock (K). On the same K clock  
rise the data presented to D[17:0] is latched and stored into the  
lower 18-bit write data register, provided BWS[1:0] are both  
asserted active. On the subsequent rising edge of the negative  
input clock (K), the address is latched and the information  
presented to D[17:0] is also stored into the write data register,  
provided BWS[1:0] are both asserted active. The 36 bits of data  
are then written into the memory array at the specified location.  
Echo Clocks  
Echo clocks are provided on the QDR II+ Xtreme to simplify data  
capture on high-speed systems. Two echo clocks are generated  
by the QDR II+ Xtreme. CQ is referenced with respect to K and  
CQ is referenced with respect to K. These are free running clocks  
and are synchronized to the input clock of the QDR II+ Xtreme.  
The timing for echo clocks is shown in the Switching  
Characteristics on page 23.  
When deselected, the write port ignores all inputs after the  
pending write operations have been completed.  
Valid Data Indicator (QVLD)  
QVLD is provided on the QDR II+ Xtreme to simplify data capture  
on high speed systems. The QVLD is generated by the QDR II+  
Xtreme device along with data output. This signal is also  
edge-aligned with the echo clock and follows the timing of any  
data pin. This signal is asserted half a cycle before valid data  
arrives.  
Byte Write Operations  
Byte write operations are supported by the CY7C2262XV18. A  
write operation is initiated as described in the Write Operations  
section. The bytes that are written are determined by BWS0 and  
BWS1, which are sampled with each set of 18-bit data words.  
Asserting the appropriate Byte Write Select input during the data  
portion of a write latches the data being presented and writes it  
into the device. Deasserting the Byte Write Select input during  
the data portion of a write enables the data stored in the device  
for that byte to remain unaltered. This feature can be used to  
simplify read, modify, or write operations to a byte write  
operation.  
On-Die Termination (ODT)  
These devices have an On-Die Termination feature for Data  
inputs (D[x:0]), Byte Write Selects (BWS[x:0]), and Input Clocks (K  
and K). The termination resistors are integrated within the chip.  
The ODT range selection is enabled through ball R6 (ODT pin).  
The ODT termination tracks value of RQ where RQ is the resistor  
tied to the ZQ pin. ODT range selection is made during power up  
initialization. A LOW on this pin selects a low range that follows  
RQ/3.33 for 175 < RQ < 350 (where RQ is the resistor tied  
to ZQ pin)A HIGH on this pin selects a high range that follows  
RQ/1.66 for 175 < RQ < 250 (where RQ is the resistor tied  
to ZQ pin). When left floating, a high range termination value is  
selected by default. For a detailed description on the ODT  
implementation, refer to the application note, On-Die Termination  
for QDRII+/DDRII+ SRAMs.  
Concurrent Transactions  
The read and write ports on the CY7C2262XV18 operate  
completely independently of one another. As each port latches  
the address inputs on different clock edges, the user can read or  
write to any location, regardless of the transaction on the other  
port. The user can start reads and writes in the same clock cycle.  
If the ports access the same location at the same time, the SRAM  
delivers the most recent information associated with the  
specified address location. This includes forwarding data from a  
write cycle that was initiated on the previous K clock rise.  
PLL  
These chips use a PLL that is designed to function between  
120 MHz and the specified maximum clock frequency. During  
power up, when the DOFF is tied HIGH, the PLL is locked after  
100 s of stable clock. The PLL can also be reset by slowing or  
stopping the input clocks K and K for a minimum of 30 ns.  
However, it is not necessary to reset the PLL to lock to the  
desired frequency. The PLL automatically locks 100 s after a  
stable clock is presented. The PLL may be disabled by applying  
ground to the DOFF pin. When the PLL is turned off, the device  
behaves in QDR I mode with one cycle latency and a longer  
access time). For information, refer to the application note, PLL  
Considerations in QDRII/DDRII/QDRII+/DDRII+.  
Depth Expansion  
The CY7C2262XV18 has a port select input for each port. This  
enables for easy depth expansion. Both port selects are sampled  
on the rising edge of the positive input clock only (K). Each port  
select input can deselect the specified port. Deselecting a port  
does not affect the other port. All pending transactions (read and  
write) are completed before the device is deselected.  
Programmable Impedance  
An external resistor, RQ, must be connected between the ZQ pin  
on the SRAM and VSS to enable the SRAM to adjust its output  
driver impedance. The value of RQ must be 5X the value of the  
intended line impedance driven by the SRAM. The allowable  
Document Number : 001-70330 Rev. *B  
Page 7 of 29  

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