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CY7C2270KV18-550BZXI PDF预览

CY7C2270KV18-550BZXI

更新时间: 2024-11-21 01:05:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 双倍数据速率静态存储器
页数 文件大小 规格书
31页 874K
描述
36-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

CY7C2270KV18-550BZXI 数据手册

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CY7C2268KV18/CY7C2270KV18  
36-Mbit DDR II+ SRAM  
Two-Word Burst Architecture  
(2.5 Cycle Read Latency) with ODT  
36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT  
Features  
Configurations  
36-Mbit density (2M × 18, 1M × 36)  
With Read Cycle Latency of 2.5 Cycles:  
CY7C2268KV18 – 2M × 18  
550 MHz clock for high bandwidth  
CY7C2270KV18 – 1M × 36  
Two-word burst for reducing address bus frequency  
Double data rate (DDR) interfaces (data transferred at  
1100 MHz) at 550 MHz  
Functional Description  
The CY7C2268KV18, and CY7C2270KV18 are 1.8  
V
Available in 2.5 clock cycle latency  
synchronous pipelined SRAMs equipped with DDR II+  
architecture. The DDR II+ consists of an SRAM core with  
advanced synchronous peripheral circuitry. Addresses for read  
and write are latched on alternate rising edges of the input (K)  
clock. Write data is registered on the rising edges of both K and  
K. Read data is driven on the rising edges of K and K. Each  
address location is associated with two 18-bit words  
(CY7C2268KV18), or 36-bit words (CY7C2270KV18) that burst  
sequentially into or out of the device.  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Echo clocks (CQ and CQ) simplify data capture in high speed  
systems  
Data valid pin (QVLD) to indicate valid data on the output  
On-die termination (ODT) feature  
Supported for D[x:0], BWS[x:0], and K/K inputs  
These devices have an on-die termination feature supported for  
D
[x:0], BWS[x:0], and K/K inputs, which helps eliminate external  
termination resistors, reduce cost, reduce board area, and  
simplify board routing.  
Synchronous internally self-timed writes  
DDR II+ operates with 2.5 cycle read latency when DOFF is  
asserted HIGH  
Asynchronous inputs include an output impedance matching  
input (ZQ). Synchronous data outputs (Q, sharing the same  
physical pins as the data inputs D) are tightly matched to the two  
output echo clocks CQ/CQ, eliminating the need for separately  
capturing data from each individual DDR SRAM in the system  
design.  
Operatessimilarto DDR Idevice with 1 cycle read latencywhen  
DOFF is asserted LOW  
[1]  
Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD  
Supports both 1.5 V and 1.8 V I/O supply  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the K or K input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
HSTL inputs and variable drive HSTL output buffers  
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)  
Offered in both Pb-free and non Pb-free packages  
JTAG 1149.1 compatible test access port  
For a complete list of related documentation, click here.  
Phase-locked loop (PLL) for accurate data placement  
Selection Guide  
Description  
Maximum operating frequency  
550 MHz  
550  
450 MHz  
450  
400 MHz Unit  
400 MHz  
Maximum operating current  
× 18  
× 36  
700  
600  
Not Offered mA  
690  
890  
Not Offered  
Note  
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V  
= 1.4 V to V  
.
DDQ  
DD  
Cypress Semiconductor Corporation  
Document Number: 001-57845 Rev. *I  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 4, 2018  

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