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CY7C199CN-20ZXI PDF预览

CY7C199CN-20ZXI

更新时间: 2024-11-21 03:14:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
14页 608K
描述
256K (32K x 8) Static RAM

CY7C199CN-20ZXI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP
包装说明:13.40 X 8 MM, LEAD FREE, PLASTIC, TSOP1-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41Factory Lead Time:1 week
风险等级:5.52最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e4长度:11.8 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.02 mm最大待机电流:0.0005 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.075 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:8 mmBase Number Matches:1

CY7C199CN-20ZXI 数据手册

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CY7C199CN  
256K (32K x 8) Static RAM  
Features  
General Description [1]  
• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns  
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)  
• CMOS for optimum speed and power  
• TTL-compatible inputs and outputs  
• 2.0V data retention  
The CY7C199CN is a high performance CMOS Asynchronous  
SRAM organized as 32K by 8 bits that supports an  
asynchronous memory interface. The device features an  
automatic power down feature that reduces power  
consumption when deselected.  
See the “Truth Table” on page 3 in this data sheet for a  
complete description of read and write modes.  
• Low CMOS standby power  
• Automated power down when deselected  
The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin  
Molded SOJ and 28-pin DIP package(s).  
• Available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and  
28-pin DIP packages  
Logic Block Diagram  
Input Buffer  
RAM Array  
I/Ox  
CE  
WE  
OE  
Power  
Down  
Circuit  
Column Decoder  
A X  
X
Product Portfolio  
–12  
–15  
–20  
20  
–25  
25  
Unit  
ns  
Maximum Access Time  
12  
85  
15  
80  
Maximum Operating Current  
75  
75  
mA  
µA  
Maximum CMOS Standby Current  
(low power)  
500  
500  
500  
500  
Note  
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 001-06435 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised March 08, 2007  
[+] Feedback  

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