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CY7C1663KV18-550BZXC PDF预览

CY7C1663KV18-550BZXC

更新时间: 2024-03-03 10:11:39
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
31页 857K
描述
Synchronous SRAM

CY7C1663KV18-550BZXC 数据手册

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CY7C1663KV18/CY7C1665KV18  
during the data portion of a write latches the data being  
presented and writes it into the device. Deasserting the Byte  
Write Select input during the data portion of a write enables the  
data stored in the device for that byte to remain unaltered. This  
feature can be used to simplify read, modify, or write operations  
to a byte write operation.  
impedance. The value of RQ must be five times the value of the  
intended line impedance driven by the SRAM, the allowable  
range of RQ to guarantee impedance matching with a tolerance  
of ±15 percent is between 175 and 350 , with VDDQ = 1.5 V.  
The output impedance is adjusted every 1024 cycles upon power  
up to account for drifts in supply voltage and temperature.  
Concurrent Transactions  
Echo Clocks  
The read and write ports on the CY7C1663KV18 operates  
completely independently of one another. As each port latches  
the address inputs on different clock edges, the user can read or  
write to any location, regardless of the transaction on the other  
port. If the ports access the same location when a read follows a  
write in successive clock cycles, the SRAM delivers the most  
recent information associated with the specified address  
location. This includes forwarding data from a write cycle that  
was initiated on the previous K clock rise.  
Echo clocks are provided on the QDR II+ to simplify data capture  
on high speed systems. Two echo clocks are generated by the  
QDR II+. CQ is referenced with respect to K and CQ is  
referenced with respect to K. These are free running clocks and  
are synchronized to the input clock of the QDR II+. The timing  
for the echo clocks is shown in the Switching Characteristics on  
page 24.  
Valid Data Indicator (QVLD)  
Read access and write access must be scheduled such that one  
transaction is initiated on any clock cycle. If both ports are  
selected on the same K clock rise, the arbitration depends on the  
previous state of the SRAM. If both ports are deselected, the  
read port takes priority. If a read was initiated on the previous  
cycle, the write port takes priority (as read operations can not be  
initiated on consecutive cycles). If a write was initiated on the  
previous cycle, the read port takes priority (as write operations  
can not be initiated on consecutive cycles). Therefore, asserting  
both port selects active from a deselected state results in  
alternating read or write operations being initiated, with the first  
access being a read.  
QVLD is provided on the QDR II+ to simplify data capture on high  
speed systems. The QVLD is generated by the QDR II+ device  
along with data output. This signal is also edge-aligned with the  
echo clock and follows the timing of any data pin. This signal is  
asserted half a cycle before valid data arrives.  
PLL  
These chips use a PLL that is designed to function between  
120 MHz and the specified maximum clock frequency. During  
power up, when the DOFF is tied high, the PLL is locked after  
20 s of stable clock. The PLL can also be reset by slowing or  
stopping the input clocks K and K for a minimum of 30 ns.  
However, it is not necessary to reset the PLL to lock to the  
desired frequency. The PLL automatically locks 20 s after a  
stable clock is presented. The PLL may be disabled by applying  
ground to the DOFF pin. When the PLL is turned off, the device  
behaves in QDR I mode (with one cycle latency and a longer  
access time).  
Depth Expansion  
The CY7C1663KV18 has a port select input for each port. This  
enables for easy depth expansion. Both port selects are sampled  
on the rising edge of the positive input clock only (K). Each port  
select input can deselect the specified port. Deselecting a port  
does not affect the other port. All pending transactions (read and  
write) are completed before the device is deselected.  
Programmable Impedance  
Connect an external resistor, RQ, between the ZQ pin on the  
SRAM and VSS to enable the SRAM to adjust its output driver  
Document Number: 001-44060 Rev. *M  
Page 7 of 31  

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