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CY7C1481BV25-133AXI PDF预览

CY7C1481BV25-133AXI

更新时间: 2024-11-29 12:52:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
21页 713K
描述
72-Mbit (2 M x 36) Flow-Through SRAM

CY7C1481BV25-133AXI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LQFP, QFP100,.63X.87Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
Factory Lead Time:1 week风险等级:5.8
最长访问时间:6.5 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:75497472 bit内存集成电路类型:CACHE SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端子数量:100
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5 V认证状态:Not Qualified
座面最大高度:1.6 mm最小待机电流:2.38 V
子类别:SRAMs最大供电电压 (Vsup):2.625 V
最小供电电压 (Vsup):2.375 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:14 mmBase Number Matches:1

CY7C1481BV25-133AXI 数据手册

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CY7C1481BV25  
72-Mbit (2 M × 36) Flow-Through SRAM  
72-Mbit (2  
M × 36) Flow-Through SRAM  
Features  
Functional Description  
Supports 133 MHz bus operations  
2 M × 36 common I/O  
The CY7C1481BV25 is a 2.5 V, 2 M × 36 synchronous flow  
through SRAM designed to interface with high speed  
microprocessors with minimum glue logic. Maximum access  
delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip  
counter captures the first address in a burst and increments the  
address automatically for the rest of the burst access. All  
synchronous inputs are gated by registers controlled by a  
positive edge triggered Clock Input (CLK). The synchronous  
inputs include all addresses, all data inputs, address pipelining  
Chip Enable (CE1), depth expansion Chip Enables (CE2 and  
CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write  
2.5 V core power supply (VDD  
2.5 V I/O supply (VDDQ  
)
)
Fast clock to output time  
6.5 ns (133 MHz version)  
Provide high performance 2-1-1-1 access rate  
User selectable burst counter supporting Intel® Pentium®  
interleaved or linear burst sequences  
Enables (BWx and BWE), and Global Write (GW). Asynchronous  
inputs include the Output Enable (OE) and the ZZ pin.  
Separate processor and controller address strobes  
Synchronous self timed write  
The CY7C1481BV25 enables either interleaved or linear burst  
sequences, selected by the MODE input pin. A HIGH selects an  
interleaved burst sequence, while a LOW selects a linear burst  
sequence. Burst accesses are initiated with the Processor  
Address Strobe (ADSP) or the cache Controller Address Strobe  
(ADSC) inputs. Address advancement is controlled by the  
Address Advancement (ADV) input.  
Asynchronous output enable  
CY7C1481BV25 available in JEDEC standard Pb-free 100-pin  
TQFP package  
IEEE 1149.1 JTAG compatible boundary scan  
ZZ sleep mode option  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or Address  
Strobe Controller (ADSC) are active. Subsequent burst  
addresses can be internally generated as controlled by the  
Advance pin (ADV).  
Selection Guide  
Description  
Maximum Access Time  
133 MHz Unit  
6.5  
305  
120  
ns  
Maximum Operating Current  
mA  
mA  
Maximum CMOS Standby Current  
Cypress Semiconductor Corporation  
Document Number: 001-74847 Rev. *A  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 24, 2013  

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