Datasheet > CY7C1471V25-117BGC

CY7C1471V25-117BGC

更新时间： 2024-09-29 14:41:35

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟静态存储器内存集成电路
页数	文件大小	规格书
26页	475K
描述
ZBT SRAM, 2MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

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CY7C1471V25-117BGC 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA, BGA119,7X17,50	针数：	119
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Is Samacsys：	N	最长访问时间：	7.5 ns
其他特性：	FLOW-THROUGH ARCHITECTURE	最大时钟频率 (fCLK)：	117 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B119
长度：	22 mm	内存密度：	75497472 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	36
功能数量：	1	端子数量：	119
字数：	2097152 words	字数代码：	2000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	2MX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装等效代码：	BGA119,7X17,50
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	电源：	1.8/2.5,2.5 V
认证状态：	Not Qualified	座面最大高度：	2.4 mm
最小待机电流：	2.38 V	子类别：	SRAMs
最大供电电压 (Vsup)：	2.625 V	最小供电电压 (Vsup)：	2.375 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	宽度：	14 mm
Base Number Matches：	1

CY7C1471V25-117BGC 数据手册

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CY7C1471V25

CY7C1473V25

CY7C1475V25

PRELIMINARY

2M x 36/4M x 18/1M x 72 Flow-through

SRAM with NoBL™ Architecture

Chip Enables (CE₁, CE₂, and CE₃), cycle start input (ADV/LD),

Clock Enable (CEN), Byte Write Selects (BWS_a, BWS_b,

BWS_c, BWS_d, BWS_e, BWS_f, BWS_g, BWS_h), and read-write

control (WE). BWS_cand BWS_dapply to CY7C1471V25 and

CY7C1475V25 only. BWS_e, BWS_f, BWS_g, and BWS_happly to

CY7C1475V25 only.

Features

• Zero Bus Latency™, no dead cycles between write and

read

• Supports 133-MHz bus operations

• 2M × 36/4M × 18/1M × 72 common I/O

• Fast clock-to-output times

Clock Enable (CEN) pin allows operation of the

CY7C1471V25, CY7C1473V25, and CY7C1475V25 to be

suspended as long as necessary. All synchronous inputs are

ignored when (CEN) is HIGH, and the internal device registers

hold their previous values.

— 5.5 ns (for 150-MHz device)

— 6.5 ns (for 133-MHz device)

— 7.5 ns (for 117-MHz device)

— 8.5 ns (for 100-MHz device)

There are three Chip Enable (CE₁, CE₂, CE₃) pins that allow

the user to deselect the device when desired. If any one of

these three are not active when ADV/LD is LOW, no new

memory operation can be initiated and any burst cycle in

progress is stopped. However, any pending data transfers

(read or write) will be completed. The data bus will be in

high-impedance state two cycles after chip is deselected or a

write cycle is initiated.

• Single 2.5V –5% and +5% power supply V_DD

• Separate V_DDQfor 2.5V or 1.8V I/O

• Clock Enable (CEN) pin to suspend operation

• Burst Capability—linear or interleaved burst order

• Available in 119-ball bump BGA and 100-pin TQFP

packages (CY7C1471V25 and CY7C1473V25). 209-ball

BGA package (for CY7C1475V25)

The CY7C1471V25,CY7C1473V25 and CY7C1475V25 have

an on-chip two-bit burst counter. In the burst mode,

CY7C1471V25, CY7C1473V25, and CY7C1475V25 provide

four cycles of data for a single address presented to the

SRAM. The order of the burst sequence is defined by the

MODE input pin. The MODE pin selects between linear and

interleaved burst sequence. The ADV/LD signal is used to load

a new external address (ADV/LD = LOW) or increment the

internal burst counter (ADV/LD = HIGH).

• 165-ball FBGA is offered by opportunity basis. (Please

contact Cypress sales or marketing)

Functional Description

The CY7C1471V25, CY7C1473V25, and CY7C1475V25

SRAMs are designed to eliminate dead cycles when transi-

tions from Read to Write or vice versa. These SRAMs are

optimized for 100 percent bus utilization and achieves Zero

Bus Latency. They integrate 2,097,152 × 36/4,194,304 ×

18/1,048,576 × 72 SRAM cells, respectively, with advanced

synchronous peripheral circuitry and a two-bit counter for

internal burst operation. The Synchronous Burst SRAM family

employs high-speed, low-power CMOS designs using

advanced single layer polysilicon, three-layer metal

technology. Each memory cell consists of six transistors.

Output Enable (OE) and burst sequence select (MODE) are

the asynchronous signals. OE can be used to disable the

outputs at any given time. ZZ may be tied to LOW if it is not

used.

Four pins are used to implement JTAG test capabilities. The

JTAG circuitry is used to serially shift data to and from the

device. JTAG inputs use LVTTL/LVCMOS levels to shift data

during this testing mode of operation.

All synchronous inputs are gated by registers controlled by a

positive-edge-triggered Clock Input (CLK). The synchronous

inputs include all addresses, all data inputs, depth-expansion

Logic Block Diagram

CLK

Data-In REG.

ADV/LD

CEN

CONTROL

and Write

LOGIC

2M × 36/

4M × 18/

1M × 72

MEMORY

ARRAY

BWS

X = a, b,

c, d

X = a, b, X= a, b,

X = 20:0

X = 21:0

2M × 36

c, d

Mode

X = a, b

X = a, b X = a, b

4M × 18

1M × 72

X = a, b,

X = 19:0

c,d,e,f,g,h

Cypress Semiconductor Corporation

Document #: 38-05287 Rev. *A

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Revised January 24, 2003

12 3 4 5 6 7...26

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与CY7C1471V25-117BGC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1471V25-133AXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-133AXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Throug
CY7C1471V25-133BGC	CYPRESS	获取价格	ZBT SRAM, 2MX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1471V25-133BZC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-133BZI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Throug
CY7C1471V25-133BZXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-133BZXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Throug
CY7C1471V25-150BGC	CYPRESS	获取价格	ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1471V25-150BZC	CYPRESS	获取价格	ZBT SRAM, 2MX36, 5.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1471V33	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture

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